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Power Transistor. IPA90R800C3 Datasheet

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Power Transistor. IPA90R800C3 Datasheet






IPA90R800C3 Transistor. Datasheet pdf. Equivalent




IPA90R800C3 Transistor. Datasheet pdf. Equivalent





Part

IPA90R800C3

Description

CoolMOS Power Transistor



Feature


IPA90R800C3 CoolMOS™ Power Transistor Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated • Hig h peak current capability • Qualified according to JEDEC1) for target applic ations • Pb-free lead plating; RoHS c ompliant • Ultra low gate charge Pro duct Summary V DS @ T J=25°C R DS(on), max @ T J= 25°C Q g,typ 900 0.8 42 V nC PG-TO220 FP CoolMOS™ 900V is.
Manufacture

Infineon Technologies

Datasheet
Download IPA90R800C3 Datasheet


Infineon Technologies IPA90R800C3

IPA90R800C3; designed for: • Quasi Resonant Flybac k / Forward topologies • PC Silverbox and consumer applications • Industri al SMPS Type IPA90R800C3 Package PG-T O220 FP Marking 9R800C Maximum rating s, at T J=25 °C, unless otherwise spec ified Parameter Continuous drain curren t 2) Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current3) Avalan che energy, single pulse Av.


Infineon Technologies IPA90R800C3

alanche energy, repetitive t AR3),4) Ava lanche current, repetitive t AR3),4) MO SFET dv /dt ruggedness Gate source volt age I D,pulse E AS E AR I AR dv /dt V G S V DS=0...400 V static AC (f>1 Hz) Pow er dissipation Operating and storage te mperature Mounting torque www.DataSheet 4U.net Value 6.9 4.4 15 157 0.46 1.4 5 0 ±20 ±30 33 -55 ... 150 Unit A T C =25 °C I D=1.4 A, V .


Infineon Technologies IPA90R800C3

DD=50 V I D=1.4 A, V DD=50 V mJ A V/ns V P tot T J, T stg T C=25 °C W °C Ncm 2008-07-30 M2.5 screws page 1 50 Rev. 1.0 IPA90R800C3 Maximum ratings , at T J=25 °C, unless otherwise speci fied Parameter Continuous diode forward current 2) Diode pulse current 3) Reve rse diode d v /dt 5) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 4. 1 15 4 V/ns Unit A Pa.

Part

IPA90R800C3

Description

CoolMOS Power Transistor



Feature


IPA90R800C3 CoolMOS™ Power Transistor Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated • Hig h peak current capability • Qualified according to JEDEC1) for target applic ations • Pb-free lead plating; RoHS c ompliant • Ultra low gate charge Pro duct Summary V DS @ T J=25°C R DS(on), max @ T J= 25°C Q g,typ 900 0.8 42 V nC PG-TO220 FP CoolMOS™ 900V is.
Manufacture

Infineon Technologies

Datasheet
Download IPA90R800C3 Datasheet




 IPA90R800C3
CoolMOSPower Transistor
Features
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
IPA90R800C3
Product Summary
V DS @ T J=25°C
R DS(on),max @ T J= 25°C
Q g,typ
900 V
0.8
42 nC
PG-TO220 FP
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Type
IPA90R800C3
Package
PG-TO220 FP
Marking
9R800C
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current2)
Pulsed drain current3)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
3),4)
AR
Avalanche
current,
repetitive
t
3),4)
AR
MOSFET dv /dt ruggedness
Gate source voltage
ID
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=1.4 A, V DD=50 V
I D=1.4 A, V DD=50 V
V DS=0...400 V
static
AC (f>1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T J, T stg
Mounting torque
M2.5 screws
www.DRateavS.he1e.t04U.net
page 1
Value
6.9
4.4
15
157
0.46
1.4
50
±20
±30
33
-55 ... 150
50
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2008-07-30




 IPA90R800C3
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Continuous diode forward current2)
Diode pulse current3)
Reverse diode dv /dt 5)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPA90R800C3
Value
4.1
15
4
Unit
A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
min.
Values
typ.
Unit
max.
- - 3.8 K/W
- - 62
- - 260 °C
Electrical characteristics, at T J=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
V GS(th) V DS=V GS, I D=0.46 mA
I DSS
V DS=900 V, V GS=0 V,
T j=25 °C
900
2.5
-
V DS=900 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=4.1 A,
T j=25 °C
-
-
-
V GS=10 V, I D=4.1 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
3
-
10
-
0.62
1.7
1.3
-V
3.5
1 µA
-
100 nA
0.8
-
-
Rev. 1.0
page 2
2008-07-30




 IPA90R800C3
Parameter
Dynamic characteristics
Symbol Conditions
IPA90R800C3
min.
Values
typ.
Unit
max.
Input capacitance
Output capacitance
C iss
C oss
Effective output capacitance, energy
related 6)
C o(er)
Effective output capacitance, time
related 7)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C o(tr)
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 500 V
V DD=400 V,
V GS=10 V, I D=4.1 A,
R G=50
-
-
-
-
-
-
-
-
1100
52
34
130
70
20
400
32
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd
Qg
V plateau
V DD=400 V, I D=4.1 A,
V GS=0 to 10 V
-
-
-
-
5 - nC
18 -
42 tbd
4.6 - V
Reverse Diode
Diode forward voltage
V SD
V GS=0 V, I F=4.1 A,
T J=25 °C
- 0.8 1.2 V
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 360 - ns
- 5.3 - µC
- 24 - A
1) J-STD20 and JESD22
2) Limited only by maximum temperature
3) Pulse width t p limited by T J,max
4) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
5) ISDID, di/dt200A/µs, VDClink=400V, Vpeak<V(BR)DSS, TJ<TJ,max, identical low side and high side switch
6) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 50% V DSS.
7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 50% V DSS.
Rev. 1.0
page 3
2008-07-30






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