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MOSFET. IPB009N03LG Datasheet

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MOSFET. IPB009N03LG Datasheet






IPB009N03LG MOSFET. Datasheet pdf. Equivalent




IPB009N03LG MOSFET. Datasheet pdf. Equivalent





Part

IPB009N03LG

Description

MOSFET



Feature


IPB009N03LG MOSFET OptiMOSª3Power-Tr ansistor,30V Features •MOSFETfor ORingandUninterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)for targetapplications •N-channel • Logiclevel •Ultra-lowon-resistance RDS(on) •100%Avalanchetested • Pb-freeplating;RoHScompliant Table 1KeyPerformanceParameters Param eter Value Unit VDS 30 V RDS.
Manufacture

Infineon Technologies

Datasheet
Download IPB009N03LG Datasheet


Infineon Technologies IPB009N03LG

IPB009N03LG; (on),max 0.95 mΩ ID 180 A D²-PAK 7pin 1 7 tab Drain Pin 4, tab Gate Pin 1 Source Pin 2,3,5,6,7 Type/Ord eringCode IPB009N03L G Package PG-TO2 63-7 Marking 009N03L RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2016-04-21 OptiMOSª3 Power-Transistor,30V IPB009N03LG Tab leofContents Description . . . . . . . . . . . . . . . . . .


Infineon Technologies IPB009N03LG

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


Infineon Technologies IPB009N03LG

.

Part

IPB009N03LG

Description

MOSFET



Feature


IPB009N03LG MOSFET OptiMOSª3Power-Tr ansistor,30V Features •MOSFETfor ORingandUninterruptiblePowerSupply •QualifiedaccordingtoJEDEC1)for targetapplications •N-channel • Logiclevel •Ultra-lowon-resistance RDS(on) •100%Avalanchetested • Pb-freeplating;RoHScompliant Table 1KeyPerformanceParameters Param eter Value Unit VDS 30 V RDS.
Manufacture

Infineon Technologies

Datasheet
Download IPB009N03LG Datasheet




 IPB009N03LG
IPB009N03LG
MOSFET
OptiMOSª3Power-Transistor,30V
Features
•MOSFETforORingandUninterruptiblePowerSupply
•QualifiedaccordingtoJEDEC1)fortargetapplications
•N-channel
•Logiclevel
•Ultra-lowon-resistanceRDS(on)
•100%Avalanchetested
•Pb-freeplating;RoHScompliant
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 30
V
RDS(on),max
0.95
m
ID 180 A
D²-PAK7pin
1
7
tab
Drain
Pin 4, tab
Gate
Pin 1
Source
Pin 2,3,5,6,7
Type/OrderingCode
IPB009N03L G
Package
PG-TO263-7
Marking
009N03L
RelatedLinks
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.0,2016-04-21




 IPB009N03LG
OptiMOSª3Power-Transistor,30V
IPB009N03LG
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2 Rev.2.0,2016-04-21




 IPB009N03LG
OptiMOSª3Power-Transistor,30V
IPB009N03LG
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
ID
Pulsed drain current1)
Avalanche current, single pulse2)
Avalanche energy, single pulse
Reversediodedv/dt
Gate source voltage
Power dissipation
Operating and storage temperature
ID,pulse
IAS
EAS
dv/dt
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-
-
-
-
-20
-
-55
Values
Typ. Max.
- 180
- 180
- 180
- 180
- 1260
- 100
- 610
-6
- 20
- 250
- 175
Unit Note/TestCondition
VGS=10V,TC=25°C
A
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
A TC=25°C
A TC=25°C
mJ ID=100A,RGS=25
kV/µs
ID=180A,VDS=24V,di/dt=200A/µs,
Tj,max=175°C
V-
W TC=25°C
°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
SMD version, device on PCB,
minimal footprint
SMD version, device on PCB,
6 cm² cooling area3)
RthJC
RthJA
RthJA
Min.
-
Values
Typ. Max.
- 0.6
Unit Note/TestCondition
K/W -
- - 62 K/W -
- - 40 K/W -
1) See Diagram 3 for more detailed information
2) See Diagram 13 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3 Rev.2.0,2016-04-21






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