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Power Transistor. IPB015N04NG Datasheet

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Power Transistor. IPB015N04NG Datasheet






IPB015N04NG Transistor. Datasheet pdf. Equivalent




IPB015N04NG Transistor. Datasheet pdf. Equivalent





Part

IPB015N04NG

Description

Power Transistor



Feature


Type IPP015N04N G IPB015N04N G OptiMOS ™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimize d technology for DC/DC converters • Q ualified according to JEDEC for target applications • N-channel, normal leve l • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc e R DS(on) • 100% Avalanche tested Pb-free plating; RoHS compliant • .
Manufacture

Infineon Technologies

Datasheet
Download IPB015N04NG Datasheet


Infineon Technologies IPB015N04NG

IPB015N04NG; Halogen-free according to IEC61249-2-21 Type IPB015N04N G IPP015N04N G 1) Prod uct Summary V DS R DS(on),max ID 40 1.5 120 V mΩ A Package Marking PG-TO26 3-3 015N04N PG-TO220-3 015N04N Maximu m ratings, at T j=25 °C, unless otherw ise specified Parameter Continuous drai n current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C Pu lsed drain current2) Av.


Infineon Technologies IPB015N04NG

alanche current, single pulse 3) Avalanc he energy, single pulse Gate source vol tage 1) 2) 3) Value 120 120 400 100 86 5 ±20 Unit A I D,pulse I AS E AS V G S T C=25 °C T C=25 °C I D=100 A, R G S=25 Ω mJ V J-STD20 and JESD22 See figure 3 for more detailed information See figure 13 for more detailed informa tion www.DataSheet4U.net Rev. 2.2 pa ge 1 2009-11-16 IPP01.


Infineon Technologies IPB015N04NG

5N04N G IPB015N04N G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Operating and storage temperature IEC climatic ca tegory; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C=25 °C Value 250 - 55 ... 175 55/175/56 Unit W °C Parame ter Symbol Conditions min. Values typ . max. Unit Thermal characteristics T hermal resistance, ju.

Part

IPB015N04NG

Description

Power Transistor



Feature


Type IPP015N04N G IPB015N04N G OptiMOS ™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimize d technology for DC/DC converters • Q ualified according to JEDEC for target applications • N-channel, normal leve l • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc e R DS(on) • 100% Avalanche tested Pb-free plating; RoHS compliant • .
Manufacture

Infineon Technologies

Datasheet
Download IPB015N04NG Datasheet




 IPB015N04NG
Type
OptiMOS™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V DS
R DS(on),max
ID
Type
IPB015N04N G
IPP015N04N G
IPP015N04N G
IPB015N04N G
40 V
1.5 m
120 A
Package
Marking
PG-TO263-3
015N04N
PG-TO220-3
015N04N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current2)
I D,pulse
Avalanche current, single pulse3)
I AS
Avalanche energy, single pulse
E AS
Gate source voltage
V GS
1) J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
T C=25 °C
T C=25 °C
I D=100 A, R GS=25
Value
120
120
400
100
865
±20
Unit
A
mJ
V
www.DRateavS.he2e.t24U.net
page 1
2009-11-16




 IPB015N04NG
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
IEC climatic category; DIN IEC 68-1
IPP015N04N G
IPB015N04N G
Value
250
-55 ... 175
55/175/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm² cooling area4)
-
-
-
- 0.6 K/W
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=200 µA
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
40
2
-
-
-
0.1
-V
4
2 µA
V DS=40 V, V GS=0 V,
T j=125 °C
-
20 200
Gate-source leakage current
Drain-source on-state resistance 5)
Gate resistance
I GSS
R DS(on)
RG
V GS=20 V, V DS=0 V
V GS=10 V, I D=100 A
-
-
-
10 100 nA
1.2 1.5 m
1.5 -
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=100 A
120
230
-S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
5) Measured from drain tab to source pin
Rev. 2.2
page 2
2009-11-16




 IPB015N04NG
Parameter
Symbol Conditions
IPP015N04N G
IPB015N04N G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
Crss
V GS=0 V, V DS=20 V,
f =1 MHz
- 15000 20000 pF
- 4000 5300
- 160 -
t d(on)
- 40 - ns
tr
V DD=20 V, V GS=10 V,
-
10
-
t d(off)
I D=30 A, R G=1.6
-
64
-
t f - 13 -
Gate Charge Characteristics6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Q gs
Q g(th)
Q gd
Q sw
Qg
V plateau
V DD=20 V, I D=100 A,
V GS=0 to 10 V
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
Q oss
V DD=20 V, V GS=0 V
-
-
-
-
-
-
-
-
76 - nC
46 -
23 -
75 -
188 250
5.0 - V
177 - nC
147 -
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=100 A,
T j=25 °C
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
- - 120 A
- - 400
-
0.88
1.2 V
- 141 - nC
6) See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2009-11-16






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