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Power Transistor. IPB016N06L3G Datasheet

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Power Transistor. IPB016N06L3G Datasheet






IPB016N06L3G Transistor. Datasheet pdf. Equivalent




IPB016N06L3G Transistor. Datasheet pdf. Equivalent





Part

IPB016N06L3G

Description

Power Transistor



Feature


Type IPB016N06L3 G OptiMOS™3 Power-T ransistor Features • Ideal for high f requency switching and sync. rec. • O ptimized technology for DC/DC converter s • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc e RDS(on) • N-channel, logic level 100% avalanche tested • Pb-free pla ting; RoHS compliant • Qualified acco rding to JEDEC1) for target applicat.
Manufacture

Infineon Technologies

Datasheet
Download IPB016N06L3G Datasheet


Infineon Technologies IPB016N06L3G

IPB016N06L3G; ions • Halogen-free according to IEC61 249-2-21 Type IPB016N06L3 G Product Su mmary V DS R DS(on),max ID 60 1.6 180 V mΩ A Package Marking PG-TO-263-7 0 16N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter C ontinuous drain current Symbol Conditio ns ID T C=25 °C2) T C=100 °C Pulsed d rain current3) Avalanche energy, single pulse4) Gate source volt.


Infineon Technologies IPB016N06L3G

age Power dissipation Operating and stor age temperature IEC climatic category; DIN IEC 68-1 1) 2) 3) 4) Value 180 180 720 634 ±20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=10 0 A, R GS=25 Ω mJ V W °C T C=25 ° C 250 -55 ... 175 55/175/56 J-STD20 a nd JESD22 Current is limited by bondwir e; with an R thJC=0.6 K/W the chip is a ble to carry 293 A. See .


Infineon Technologies IPB016N06L3G

figure 3 for more detailed information S ee figure 13 for more detailed informat ion www.DataSheet4U.net Rev. 2.3 pag e 1 2009-11-16 IPB016N06L3 G Paramet er Symbol Conditions min. Values typ. max. Unit Thermal characteristics Th ermal resistance, junction - case Therm al resistance, junction - ambient R thJ C R thJA minimal footprint 6 cm² cooli ng area 5) 0.6 62 4.

Part

IPB016N06L3G

Description

Power Transistor



Feature


Type IPB016N06L3 G OptiMOS™3 Power-T ransistor Features • Ideal for high f requency switching and sync. rec. • O ptimized technology for DC/DC converter s • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc e RDS(on) • N-channel, logic level 100% avalanche tested • Pb-free pla ting; RoHS compliant • Qualified acco rding to JEDEC1) for target applicat.
Manufacture

Infineon Technologies

Datasheet
Download IPB016N06L3G Datasheet




 IPB016N06L3G
Type
OptiMOS™3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
IPB016N06L3 G
IPB016N06L3 G
Product Summary
V DS
R DS(on),max
ID
60 V
1.6 m
180 A
Package
Marking
PG-TO-263-7
016N06L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse4) E AS I D=100 A, R GS=25
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) Current is limited by bondwire; with an R thJC=0.6 K/W the chip is able to carry 293 A.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Value
180
180
720
634
±20
250
-55 ... 175
55/175/56
www.DRateavS.he2e.t34U.net
page 1
Unit
A
mJ
V
W
°C
2009-11-16




 IPB016N06L3G
IPB016N06L3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
minimal footprint
6 cm² cooling area5)
min.
Values
typ.
Unit
max.
- - 0.6 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=196 µA
1.2
1.7
2.2
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.1
3 µA
Gate-source leakage current
Drain-source on-state resistance
V DS=60 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
V GS=20 V, V DS=0 V
V GS=10 V, I D=100 A
-
-
-
30 300
1 100 nA
1.2 1.6 m
V GS=4.5 V, I D=50 A - 1.6 2.7
Gate resistance
Transconductance
R G - 1.3
g fs
|V DS|>2|I D|R DS(on)max,
I D=100 A
124
248
-
-S
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.3
page 2
2009-11-16




 IPB016N06L3G
IPB016N06L3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
C rss
V GS=0 V, V DS=30 V,
f =1 MHz
- 21000 28000 pF
- 3300 4400
- 140 -
t d(on)
- 35 - ns
tr
V DD=30 V, V GS=10 V,
-
79
-
t d(off)
I D=100 A, R G=1.6
-
131
-
t f - 38 -
Gate Charge Characteristics6)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
Q gd
Q sw
Qg
V plateau
Q oss
V DD=30 V, I D=100 A,
V GS=0 to 4.5 V
V DD=30 V, V GS=0 V
-
-
-
-
-
-
65 - nC
21 -
50 -
125 166
3.1 - V
165 219 nC
Reverse Diode
Diode continous forward current
Diode pulse current
IS
I S,pulse
T C=25 °C
- - 180 A
- - 720
Diode forward voltage
V SD
V GS=0 V, I F=100 A,
T j=25 °C
-
0.9 1.2 V
Reverse recovery time
Reverse recovery charge
t rr V R=30 V, I F=100A, - 71 - ns
Q rr di F/dt =100 A/µs
- 87 - nC
6) See figure 16 for gate charge parameter definition
Rev. 2.3
page 3
2009-11-16






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