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Power Transistor. IPB017N06N3G Datasheet

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Power Transistor. IPB017N06N3G Datasheet






IPB017N06N3G Transistor. Datasheet pdf. Equivalent




IPB017N06N3G Transistor. Datasheet pdf. Equivalent





Part

IPB017N06N3G

Description

Power Transistor

Manufacture

Infineon Technologies

Datasheet
Download IPB017N06N3G Datasheet


Infineon Technologies IPB017N06N3G

IPB017N06N3G; Type IPB017N06N3 G OptiMOS™3 Power-T ransistor Features • Ideal for high f requency switching and sync. rec. • O ptimized technology for DC/DC converter s • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc e RDS(on) • N-channel, normal level 100% avalanche tested • Pb-free pl ating; RoHS compliant • Qualified acc ording to JEDEC1) for target applica.


Infineon Technologies IPB017N06N3G

tions • Halogen-free according to IEC6 1249-2-21 Type IPB017N06N3 G Product S ummary V DS R DS(on),max ID 60 1.7 180 V mΩ A Package Marking PG-TO263-7 0 17N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter C ontinuous drain current Symbol Conditio ns ID T C=25 °C2) T C=100 °C Pulsed d rain current3) Avalanche energy, single pulse4) Gate source volt.


Infineon Technologies IPB017N06N3G

age Power dissipation Operating and stor age temperature IEC climatic category; DIN IEC 68-1 1) 2) 3) 4) Value 180 180 720 634 ±20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=10 0 A, R GS=25 Ω mJ V W °C T C=25 ° C 250 -55 ... 175 55/175/56 J-STD20 a nd JESD22 Current is limited by bondwir e; with an R thJC=0.6 K/W the chip is a ble to carry 284 A. See .



Part

IPB017N06N3G

Description

Power Transistor

Manufacture

Infineon Technologies

Datasheet
Download IPB017N06N3G Datasheet




 IPB017N06N3G
Type
IPB017N06N3 G
OptiMOS™3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
IPB017N06N3 G
Product Summary
V DS
R DS(on),max
ID
60 V
1.7 m
180 A
Package
Marking
PG-TO263-7
017N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current3)
Avalanche energy, single pulse4)
Gate source voltage
I D,pulse
E AS
V GS
T C=25 °C
I D=100 A, R GS=25
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) Current is limited by bondwire; with an R thJC=0.6 K/W the chip is able to carry 284 A.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Value
180
180
720
634
±20
250
-55 ... 175
55/175/56
www.DRateavS.he2e.t24U.net
page 1
Unit
A
mJ
V
W
°C
2009-11-16





 IPB017N06N3G
IPB017N06N3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
minimal footprint
6 cm² cooling area5)
min.
Values
typ.
Unit
max.
- - 0.6 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=196 µA
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
V DS=60 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
RG
V GS=20 V, V DS=0 V
V GS=10 V, I D=100 A
g fs
|V DS|>2|I D|R DS(on)max,
I D=100 A
60
2
-
-
-
-
-
99
- -V
34
0.1 3 µA
30 300
1 100 nA
1.3 1.7 m
1.3 -
198 - S
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2009-11-16





 IPB017N06N3G
IPB017N06N3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
C rss
V GS=0 V, V DS=30 V,
f =1 MHz
- 17000 23000 pF
- 3700 4900
- 120 -
t d(on)
- 41 - ns
tr
V DD=30 V, V GS=10 V,
-
80
-
t d(off)
I D=100 A, R G=1.6
-
79
-
t f - 24 -
Gate Charge Characteristics6)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
Q gd
Q sw
Qg
V plateau
Q oss
V DD=30 V, I D=100 A,
V GS=0 to 10 V
V DD=30 V, V GS=0 V
-
-
-
-
-
-
82 - nC
17 -
49 -
206 275
4.9 - V
167 222 nC
Reverse Diode
Diode continous forward current
Diode pulse current
IS
I S,pulse
T C=25 °C
- - 180 A
- - 720
Diode forward voltage
V SD
V GS=0 V, I F=100 A,
T j=25 °C
-
0.9 1.2 V
Reverse recovery time
Reverse recovery charge
t rr V R=30 V, I F=100A, - 67 - ns
Q rr di F/dt =100 A/µs
- 83 - nC
6) See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2009-11-16



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