Type
IPB019N06L3 G
OptiMOS™3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized...
Type
IPB019N06L3 G
OptiMOS™3 Power-
Transistor
Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Very low on-resistance RDS(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Type IPB019N06L3 G
Product Summary V DS R DS(on),max ID 60 1.9 120 V mΩ A
Package Marking
PG-TO-263-3 019N06L
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
1) 2) 3) 4)
Value 120 120 480 634 ±20
Unit A
I D,pulse E AS V GS P tot T j, T stg
T C=25 °C I D=100 A, R GS=25 Ω
mJ V W °C
T C=25 °C
250 -55 ... 175 55/175/56
J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=0.6 K/W the chip is able to carry 269 A. See figure 3 for more detailed information See figure 13 for more detailed information
www.DataSheet4U.net
Rev. 2.2
page 1
2009-11-16
IPB019N06L3 G
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm² cooling area 5) 0.6 62 40 K/W
Electrical ch...