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Power Transistor. IPB60R099CP Datasheet

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Power Transistor. IPB60R099CP Datasheet






IPB60R099CP Transistor. Datasheet pdf. Equivalent




IPB60R099CP Transistor. Datasheet pdf. Equivalent





Part

IPB60R099CP

Description

Power Transistor



Feature


IPB60R099CP CoolMOSTM Power Transistor Features • Worldwide best R ds,on in TO263 • Ultra low gate charge • Ext reme dv/dt rated • High peak current capability • Qualified according to J EDEC1) for target applications • Pb-f ree lead plating; RoHS compliant Produ ct Summary V DS @ Tj,max R DS(on),max Q g,typ 650 0.099 60 V Ω nC PG-TO263 CoolMOS CP is specially designe.
Manufacture

Infineon Technologies

Datasheet
Download IPB60R099CP Datasheet


Infineon Technologies IPB60R099CP

IPB60R099CP; d for: • Hard switching SMPS topologie s for Server and Telecom Type IPB60R09 9CP Package PG-TO263 Ordering Code SP 000088490 Marking 6R099 Maximum ratin gs, at T j=25 °C, unless otherwise spe cified Parameter Continuous drain curre nt Symbol Conditions ID T C=25 °C T C= 100 °C Pulsed drain current2) Avalanch e energy, single pulse Avalanche energy , repetitive t AR2),3) .


Infineon Technologies IPB60R099CP

Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source vo ltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 ° C T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V Value 31 19 93 800 1.2 11 50 ±20 ±30 255 -55 ... 150 W °C A V /ns V mJ Unit A www.Da.


Infineon Technologies IPB60R099CP

taSheet4U.net Rev. 2.0 page 1 2006-06 -19 IPB60R099CP Maximum ratings, at T j=25 °C, unless otherwise specified Pa rameter Continuous diode forward curren t Diode pulse current 2) Symbol Condit ions IS I S,pulse dv /dt Symbol Conditi ons min. T C=25 °C Value 18 93 15 Val ues typ. max. Unit A Reverse diode d v /dt 4) Parameter V/ns Unit Thermal characteristics Ther.

Part

IPB60R099CP

Description

Power Transistor



Feature


IPB60R099CP CoolMOSTM Power Transistor Features • Worldwide best R ds,on in TO263 • Ultra low gate charge • Ext reme dv/dt rated • High peak current capability • Qualified according to J EDEC1) for target applications • Pb-f ree lead plating; RoHS compliant Produ ct Summary V DS @ Tj,max R DS(on),max Q g,typ 650 0.099 60 V Ω nC PG-TO263 CoolMOS CP is specially designe.
Manufacture

Infineon Technologies

Datasheet
Download IPB60R099CP Datasheet




 IPB60R099CP
CoolMOSTM Power Transistor
Features
• Worldwide best R ds,on in TO263
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPB60R099CP
650 V
0.099
60 nC
PG-TO263
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies for Server and Telecom
Type
IPB60R099CP
Package
PG-TO263
Ordering Code
SP000088490
Marking
6R099
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
ID
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=11 A, V DD=50 V
I D=11 A, V DD=50 V
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Value
31
19
93
800
1.2
11
50
±20
±30
255
-55 ... 150
www.DRateavS.he2e.t04U.net
page 1
Unit
A
mJ
A
V/ns
V
W
°C
2006-06-19




 IPB60R099CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPB60R099CP
Value
18
93
15
Unit
A
V/ns
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
Soldering temperature,
reflowsoldering
T sold
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm2 cooling
area5)
reflow MSL 1
-
-
-
-
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
Gate threshold voltage
V GS(th) V DS=V GS, I D=1.2 mA
2.5
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
R DS(on)
RG
V GS=20 V, V DS=0 V
V GS=10 V, I D=18 A,
T j=25 °C
V GS=10 V, I D=18 A,
T j=150 °C
f =1 MHz, open drain
-
-
-
-
-
-
- 0.5 K/W
- 62
35 -
- 260 °C
- -V
3 3.5
- 5 µA
50 -
-
0.09
100 nA
0.099
0.24
1.3
-
-
Rev. 2.0
page 2
2006-06-19




 IPB60R099CP
Parameter
Dynamic characteristics
Symbol Conditions
IPB60R099CP
min.
Values
typ.
Unit
max.
Input capacitance
Output capacitance
C iss
C oss
Effective output capacitance, energy
related6)
C o(er)
Effective output capacitance, time
related7)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C o(tr)
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=18 A,
R G=3.3
-
-
-
-
-
-
-
-
2800
130
130
340
10
5
60
5
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd
Qg
V plateau
V DD=400 V, I D=18 A,
V GS=0 to 10 V
-
-
-
-
14 - nC
20 -
60 80
5.0 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=18 A,
T j=25 °C
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 0.9 1.2 V
- 450 - ns
- 12 - µC
- 70 - A
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
4) ISD<=ID, di/dt<=100A/µs,VDClink = 400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch
5) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB
is vertical without blown air
6) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2006-06-19






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