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Power Transistor. IPB60R199CPA Datasheet

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Power Transistor. IPB60R199CPA Datasheet






IPB60R199CPA Transistor. Datasheet pdf. Equivalent




IPB60R199CPA Transistor. Datasheet pdf. Equivalent





Part

IPB60R199CPA

Description

Power Transistor

Manufacture

Infineon Technologies

Datasheet
Download IPB60R199CPA Datasheet


Infineon Technologies IPB60R199CPA

IPB60R199CPA; IPB60R199CPA CoolMOS® Power Transistor Product Summary V DS R DS(on),max Q g ,typ 600 V 0.199 Ω 33 nC Features Lowest figure-of-merit Ron x Qg • U ltra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • G reen package (RoHS compliant) CoolMOS C PA is specially designed for: • DC/DC converters for Automotive Applica.


Infineon Technologies IPB60R199CPA

tions PG-TO263-3 Type IPB60R199CPA Pac kage PG-TO263-3 Marking 6R199A Maximu m ratings, at T j=25 °C, unless otherw ise specified Parameter Continuous drai n current Symbol Conditions ID T C=25 C T C=100 °C Pulsed drain current1) A valanche energy, single pulse Avalanche energy, repetitive t AR1),2) Avalanche current, repetitive t AR1),2) MOSFET d v /dt ruggedness Gate.


Infineon Technologies IPB60R199CPA

source voltage Power dissipation Operat ing temperature Storage temperature Rev . 2.0 I D,pulse E AS E AR I AR dv /dt V GS P tot Tj T stg page 1 V DS=0...480 V static T C=25 °C T C=25 °C I D=6.6 A, V DD=50 V I D=6.6 A, V DD=50 V Value 16 10 51 436 0.66 6.6 50 ±20 139 -40 ... 150 -40 ... 150 2009-09-01 A V/ns V W °C mJ Unit A www.DataSheet4U.net IPB60R199CPA Maximum r.



Part

IPB60R199CPA

Description

Power Transistor

Manufacture

Infineon Technologies

Datasheet
Download IPB60R199CPA Datasheet




 IPB60R199CPA
CoolMOS® Power Transistor
Features
• Lowest figure-of-merit Ron x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
CoolMOS CPA is specially designed for:
• DC/DC converters for Automotive Applications
Product Summary
V DS
R DS(on),max
Q g,typ
IPB60R199CPA
600 V
0.199 Ω
33 nC
PG-TO263-3
Type
IPB60R199CPA
Package
PG-TO263-3
Marking
6R199A
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current1)
Avalanche energy, single pulse
Symbol Conditions
I D T C=25 °C
T C=100 °C
I D,pulse T C=25 °C
E AS I D=6.6 A, V DD=50 V
Avalanche
energy,
repetitive
t
1),2)
AR
E AR
I D=6.6 A, V DD=50 V
Avalanche
current,
repetitive
t
1),2)
AR
I AR
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating temperature
Storage temperature
dv /dt
V GS
P tot
Tj
T stg
V DS=0...480 V
static
T C=25 °C
www.DRateaSvh. e2e.t40U.net
page 1
Value
16
10
51
436
0.66
6.6
50
±20
139
-40 ... 150
-40 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2009-09-01





 IPB60R199CPA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current1)
Reverse diode dv /dt 3)
Symbol Conditions
IS
I S,pulse
dv /dt
T C=25 °C
IPB60R199CPA
Value
9.9
51
15
Unit
A
V/ns
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
Soldering temperature,
reflow soldering
T sold
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm2 cooling
area4)
MSL 1
-
-
-
-
- 0.9 K/W
- 62
35 -
- 245 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
V GS(th) V DS=V GS, I D=1.1 mA
600
2.5
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
I GSS
R DS(on)
RG
V GS=20 V, V DS=0 V
V GS=10 V, I D=9.9 A,
T j=25 °C
V GS=10 V, I D=9.9 A,
T j=150 °C
f =1 MHz, open drain
-
-
-
-
-
- -V
3 3.5
- 1 µA
- 100 nA
0.18 0.199 Ω
0.49 -
2 -Ω
Rev. 2.0
page 2
2009-09-01





 IPB60R199CPA
IPB60R199CPA
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
C o(tr)
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=9.9 A,
R G=3.3 Ω
-
-
-
-
-
-
-
-
1520
72
69
180
10
5
50
5
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd V DD=400 V, I D=9.9 A,
Q g V GS=0 to 10 V
V plateau
-
-
-
-
8 - nC
11 -
32 43
5.0 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=9.9 A,
T j=25 °C
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 0.9 1.2 V
- 340 - ns
- 5.5 - µC
- 33 - A
1) Pulse width t p limited by T j,max
2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
3) I SDI D, di /dt 200A/µs, V DClink=400V, V peak<V (BR)DSS, T j<T jmax, identical low side and high side switch.
4) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection.
PCB is vertical without blown air.
5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2009-09-01



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