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Power Transistor. IPB60R299CP Datasheet

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Power Transistor. IPB60R299CP Datasheet






IPB60R299CP Transistor. Datasheet pdf. Equivalent




IPB60R299CP Transistor. Datasheet pdf. Equivalent





Part

IPB60R299CP

Description

Power Transistor

Manufacture

Infineon Technologies

Datasheet
Download IPB60R299CP Datasheet


Infineon Technologies IPB60R299CP

IPB60R299CP; IPB60R299CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R O NxQg • Ultra low gate charge • Extr eme dv/dt rated • High peak current c apability • Qualified according to JE DEC1) for target applications • Pb-fr ee lead plating; RoHS compliant Produc t Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.299 Ω 22 nC PG-TO263 CoolMOS CP is designed for: Har.


Infineon Technologies IPB60R299CP

d switching SMPS topologies Type IPB60R 299CP Package PG-TO263 Marking 6R299P Maximum ratings, at T j=25 °C, unles s otherwise specified Parameter Continu ous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain cur rent2) Avalanche energy, single pulse A valanche energy, repetitive t AR2),3) A valanche current, repetitive t AR2),3) MOSFET dv /dt ruggedn.


Infineon Technologies IPB60R299CP

ess Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V sta tic AC (f >1 Hz) Power dissipation Oper ating and storage temperature Mounting torque www.DataSheet4U.net Value 11 7 34 290 0.44 Unit A T C=25 °C I D=4.4 A, V DD=50 V I D=4.4 A, V DD=50 V mJ 4.4 50 ±20 ±30 96 -55 ... 150 M3 and M3.5 screws page 1 60 A V/ns V P tot T j, T stg T C=25 °.



Part

IPB60R299CP

Description

Power Transistor

Manufacture

Infineon Technologies

Datasheet
Download IPB60R299CP Datasheet




 IPB60R299CP
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPB60R299CP
650 V
0.299
22 nC
PG-TO263
CoolMOS CP is designed for:
Hard switching SMPS topologies
Type
IPB60R299CP
Package
PG-TO263
Marking
6R299P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Symbol Conditions
ID
I D,pulse
E AS
T C=25 °C
T C=100 °C
T C=25 °C
I D=4.4 A, V DD=50 V
Avalanche
energy,
repetitive
t
2),3)
AR
E AR
I D=4.4 A, V DD=50 V
Avalanche
current,
repetitive
t
2),3)
AR
I AR
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
dv /dt
V GS
V DS=0...480 V
static
AC (f >1 Hz)
P tot T C=25 °C
T j, T stg
M3 and M3.5 screws
www.DRateavS.he2e.t04U.net
page 1
Value
11
7
34
290
0.44
4.4
50
±20
±30
96
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2007-11-22





 IPB60R299CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPB60R299CP
Value
6.6
34
15
Unit
A
V/ns
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
Soldering temperature,
reflowsoldering
T sold
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm2 cooling
area3)
reflow MSL 1
Electrical characteristics, at T j=25 °C, unless otherwise specified
-
-
-
-
- 1.3 K/W
- 62
35 -
- 260 °C
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=0,44 mA 2.5 3 3.5
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Rev. 2.0
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
I GSS
V DS=600 V, V GS=0 V,
T j=150 °C
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=6.6 A,
T j=25 °C
V GS=10 V, I D=6.6 A,
T j=150 °C
R G f =1 MHz, open drain
page 2
-
-
-
-
-
-
- 1 µA
10 -
- 100 nA
0.27 0.299
0.73
1.9 -
2007-11-22





 IPB60R299CP
Parameter
Dynamic characteristics
Symbol Conditions
IPB60R299CP
min.
Values
typ.
Unit
max.
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
C o(tr)
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=6.6 A,
R G=4.3
-
-
-
-
-
-
-
-
1100
60
46
120
10
5
40
5
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd
Qg
V plateau
V DD=400 V, I D=6.6 A,
V GS=0 to 10 V
-
-
-
-
5 - nC
7.6 -
22 29
5.0 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=6.6 A,
T j=25 °C
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 0.9 1.2 V
- 300 - ns
- 3.9 - µC
- 26 - A
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
4) ISDID, di/dt200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2007-11-22



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