IPB60R299CP

IPB60R299CP CoolMOSTM Power Transistor Features Lowest figure-of-merit R ONxQg Ultra low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.299 Ω 22 nC PG-TO263 CoolMOS CP is designed for: Hard switching SMPS topologies Type IPB60R299CP Package PG-TO263 Marking 6R299P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque www.DataSheet4U.net Value 11 7 34 290 0.44 Unit A T C=25 °C I D=4.4 A, V DD=50 V I D=4.4 A, V DD=50 V mJ 4.4 50 ±20 ±30 96 -55 ... 150 M3 and M3.5 screws page 1 60 A V/ns V P tot T j, T stg T C=25 °C W °C Ncm 2007-11-22 Rev. 2.0 IPB60R299CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 6.6 34 15 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case...