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Power Transistor. IPB60R385CP Datasheet

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Power Transistor. IPB60R385CP Datasheet






IPB60R385CP Transistor. Datasheet pdf. Equivalent




IPB60R385CP Transistor. Datasheet pdf. Equivalent





Part

IPB60R385CP

Description

Power Transistor



Feature


IPB60R385CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R O N x Qg • Ultra low gate charge • Hi gh peak current capability • Qualifie d according to JEDEC1) for target appli cations • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,ma x R DS(on),max Q g,typ 650 V 0.385 Ω 17 nC PG-TO263 CoolMOS CP is special ly designed for: • Hard switch.
Manufacture

Infineon Technologies

Datasheet
Download IPB60R385CP Datasheet


Infineon Technologies IPB60R385CP

IPB60R385CP; ing SMPS topologies Type IPB60R385CP P ackage PG-TO263 Ordering Code SP000228 365 Marking 6R385P Maximum ratings, a t T j=25 °C, unless otherwise specifie d Parameter Continuous drain current Sy mbol Conditions ID T C=25 °C T C=100 C Pulsed drain current2) Avalanche ene rgy, single pulse Avalanche energy, rep etitive t AR2),3) Avalanche current, re petitive t AR2),3) MO.


Infineon Technologies IPB60R385CP

SFET dv /dt ruggedness Gate source volta ge I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Pow er dissipation Operating and storage te mperature P tot T j, T stg T C=25 °C T C=25 °C I D=3.4 A, V DD=50 V I D=3.4 A, V DD=50 V Value 9.0 5.7 27 227 0.3 3 50 ±20 ±30 83 -55 ... 150 W °C A V/ ns V mJ Unit A www.DataSheet4U.net Re v. 2.0 page 1 2006-06.


Infineon Technologies IPB60R385CP

-06 IPB60R385CP Maximum ratings, at T j =25 °C, unless otherwise specified Par ameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Parameter Symbol Conditions I S I S,pulse dv /dt Symbol Conditions mi n. Thermal characteristics Thermal resi stance, junction - case R thJC R thJA T hermal resistance, junction ambient SMD version, device on.

Part

IPB60R385CP

Description

Power Transistor



Feature


IPB60R385CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R O N x Qg • Ultra low gate charge • Hi gh peak current capability • Qualifie d according to JEDEC1) for target appli cations • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,ma x R DS(on),max Q g,typ 650 V 0.385 Ω 17 nC PG-TO263 CoolMOS CP is special ly designed for: • Hard switch.
Manufacture

Infineon Technologies

Datasheet
Download IPB60R385CP Datasheet




 IPB60R385CP
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Ultra low gate charge
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPB60R385CP
650 V
0.385
17 nC
PG-TO263
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Type
IPB60R385CP
Package
PG-TO263
Ordering Code Marking
SP000228365 6R385P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
ID
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=3.4 A, V DD=50 V
I D=3.4 A, V DD=50 V
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Value
9.0
5.7
27
227
0.3
3
50
±20
±30
83
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
www.DRateavS.he2e.t04U.net
page 1
2006-06-06




 IPB60R385CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPB60R385CP
Value
5.2
27
15
Unit
A
V/ns
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
Soldering temperature,
wave- & reflowsolderin allowed
T sold
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm2 cooling
area5)
reflow MSL 1
-
-
-
-
- 1.5 K/W
- 62
35 -
- 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
Gate threshold voltage
V GS(th) V DS=V GS, I D=0.34 mA 2.5
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=5.2 A,
T j=25 °C
V GS=10 V, I D=5.2 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
-
-
-
- -V
3 3.5
- 1 µA
10 -
- 100 nA
0.35 0.385
0.94
1.8
-
-
Rev. 2.0
page 2
2006-06-06




 IPB60R385CP
IPB60R385CP
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
C iss V GS=0 V, V DS=100 V, - 790 - pF
C oss
f =1 MHz
- 38 -
Effective output capacitance, energy
related6)
C o(er)
Effective output capacitance, time
related7)
C o(tr)
V GS=0 V, V DS=0 V
to 480 V
- 36 -
- 96 -
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t d(on)
- 10 - ns
tr
V DD=400 V,
V GS=10 V, I D=5.2 A,
-
5
-
t d(off)
R G=3.3
- 40 -
tf - 5 -
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd
Qg
V plateau
V DD=400 V, I D=5.2 A,
V GS=0 to 10 V
-
-
-
-
4 - nC
6-
17 22
5.0 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=5.2 A,
T j=25 °C
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 0.9 1.2 V
- 260 - ns
- 3.1 - µC
- 24 - A
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
4) ISDID, di/dt400A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
5) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB
is vertical without blown air
6) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2006-06-06






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