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Power Transistor. IPB60R520CP Datasheet

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Power Transistor. IPB60R520CP Datasheet






IPB60R520CP Transistor. Datasheet pdf. Equivalent




IPB60R520CP Transistor. Datasheet pdf. Equivalent





Part

IPB60R520CP

Description

Power Transistor



Feature


IPB60R520CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R O N x Qg • Ultra low gate charge • Ex treme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb- free lead plating; RoHS compliant Prod uct Summary V DS @ Tj,max R DS(on),max @ Tj = 25°C Q g,typ 650 V 0.520 Ω 2 4 nC PG-TO263 CoolMOS CP is des.
Manufacture

Infineon Technologies

Datasheet
Download IPB60R520CP Datasheet


Infineon Technologies IPB60R520CP

IPB60R520CP; igned for: • Hard switching SMPS topol ogies Type IPB60R520CP Package PG-TO2 63 Marking 6R520P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Sym bol Conditions ID T C=25 °C T C=100 ° C Pulsed drain current2) Avalanche ener gy, single pulse Avalanche energy, repe titive t AR2),3) Avalanche current, rep etitive t AR2),3) MOSFE.


Infineon Technologies IPB60R520CP

T dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage tempe rature P tot T j, T stg T C=25 °C T C= 25 °C I D=2.5 A, V DD=50 V I D=2.5 A, V DD=50 V Value 6.8 4.3 17 166 0.25 2.5 50 ±20 ±30 66 -55 ... 150 W °C A V/ ns V mJ Unit A www.DataSheet4U.net Re v. 2.0 page 1 2008-02.


Infineon Technologies IPB60R520CP

-15 IPB60R520CP Maximum ratings, at T j =25 °C, unless otherwise specified Par ameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Parameter Symbol Conditions I S I S,pulse dv /dt Symbol Conditions mi n. Thermal characteristics Thermal resi stance, junction - case R thJC R thJA l eaded SMD version, device on PCB, minim al footprint SMD ve.

Part

IPB60R520CP

Description

Power Transistor



Feature


IPB60R520CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R O N x Qg • Ultra low gate charge • Ex treme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb- free lead plating; RoHS compliant Prod uct Summary V DS @ Tj,max R DS(on),max @ Tj = 25°C Q g,typ 650 V 0.520 Ω 2 4 nC PG-TO263 CoolMOS CP is des.
Manufacture

Infineon Technologies

Datasheet
Download IPB60R520CP Datasheet




 IPB60R520CP
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max @ Tj = 25°C
Q g,typ
IPB60R520CP
650 V
0.520
24 nC
PG-TO263
CoolMOS CP is designed for:
• Hard switching SMPS topologies
Type
IPB60R520CP
Package
PG-TO263
Marking
6R520P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
ID
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=2.5 A, V DD=50 V
I D=2.5 A, V DD=50 V
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
www.DRateavS.he2e.t04U.net
page 1
Value
6.8
4.3
17
166
0.25
2.5
50
±20
±30
66
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2008-02-15




 IPB60R520CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPB60R520CP
Value
3.8
17
15
Unit
A
V/ns
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
- - 1.9 K/W
Thermal resistance, junction -
ambient
R thJA
R thJA
leaded
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm2 cooling
area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
-
-
-
- 62
- 62
35 -
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
2.5
3
3.5
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Rev. 2.0
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=3.8 A,
T j=25 °C
V GS=10 V, I D=3.8 A,
T j=150 °C
R G f =1 MHz, open drain
page 2
-
-
-
-
-
-
- 1 µA
10 -
- 100 nA
0.47 0.52
1.3 -
1.3 -
2008-02-15




 IPB60R520CP
Parameter
Dynamic characteristics
Symbol Conditions
IPB60R520CP
min.
Values
typ.
Unit
max.
Input capacitance
Output capacitance
C iss V GS=0 V, V DS=100 V, - 630 - pF
C oss
f =1 MHz
- 32 -
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
C o(tr)
V GS=0 V, V DS=0 V
to 480 V
- 30 -
- 77 -
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t d(on)
- 17 - ns
t r V DD=400 V,
- 12 -
V GS=10 V, I D=3.8 A,
t d(off)
R G=14.7
- 74 -
t f - 16 -
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd
Qg
V plateau
V DD=480 V, I D=3.8 A,
V GS=0 to 10 V
-
-
-
-
3 - nC
11 -
24 31
4.7 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=3.8 A,
T j=25 °C
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 0.8 1.2 V
- 230 - ns
- 2.5 - µC
- 20 - A
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
4) ISD=ID, di/dt400A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2008-02-15






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