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Power Transistor. IPB60R600CP Datasheet

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Power Transistor. IPB60R600CP Datasheet






IPB60R600CP Transistor. Datasheet pdf. Equivalent




IPB60R600CP Transistor. Datasheet pdf. Equivalent





Part

IPB60R600CP

Description

Power Transistor

Manufacture

Infineon Technologies

Datasheet
Download IPB60R600CP Datasheet


Infineon Technologies IPB60R600CP

IPB60R600CP; IPB60R600CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R O N x Qg • Ultra low gate charge • Ex treme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb- free lead plating; RoHS compliant Prod uct Summary V DS @ Tj,max R DS(on),max @ Tj =25°C Q g,typ 650 0.6 21 V Ω nC PG-TO263 CoolMOS CP is designe.


Infineon Technologies IPB60R600CP

d for: • Hard switching SMPS topologie s Type IPB60R600CP Package PG-TO263 Marking 6R600P Maximum ratings, at T j =25 °C, unless otherwise specified Par ameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pu lsed drain current2) Avalanche energy, single pulse Avalanche energy, repetiti ve t AR2),3) Avalanche current, repetit ive t AR2),3) MOSFET dv.


Infineon Technologies IPB60R600CP

/dt ruggedness Gate source voltage I D, pulse E AS E AR I AR dv /dt V GS V DS=0 ...480 V static AC (f >1 Hz) Power diss ipation Operating and storage temperatu re P tot T j, T stg T C=25 °C T C=25 C I D=2.2 A, V DD=50 V I D=2.2 A, V DD =50 V Value 6.1 3.8 15 144 0.2 2.2 50 20 ±30 60 -55 ... 150 W °C A V/ns V mJ Unit A www.DataSheet4U.net Rev.2.0 page 1 2008-02-15 I.



Part

IPB60R600CP

Description

Power Transistor

Manufacture

Infineon Technologies

Datasheet
Download IPB60R600CP Datasheet




 IPB60R600CP
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max @ Tj =25°C
Q g,typ
IPB60R600CP
650 V
0.6
21 nC
PG-TO263
CoolMOS CP is designed for:
• Hard switching SMPS topologies
Type
IPB60R600CP
Package
PG-TO263
Marking
6R600P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
ID
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=2.2 A, V DD=50 V
I D=2.2 A, V DD=50 V
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
www.DRateavS.h2e.e0t4U.net
page 1
Value
6.1
3.8
15
144
0.2
2.2
50
±20
±30
60
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2008-02-15





 IPB60R600CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPB60R600CP
Value
3.3
15
15
Unit
A
V/ns
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
- - 2.1 K/W
Thermal resistance, junction -
ambient
R thJA
R thJA
leaded
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm2 cooling
area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
-
-
-
- 62
- 62
35 -
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
V GS(th) V DS=V GS, I D=220µA
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=3.3 A,
T j=25 °C
V GS=10 V, I D=3.3 A,
T j=150 °C
R G f =1 MHz, open drain
600
2.5
-
-
-
-
-
-
-
3
-
10
-
0.54
1.5
1.5
-V
3.5
1 µA
-
100 nA
0.6
-
-
Rev.2.0
page 2
2008-02-15





 IPB60R600CP
Parameter
Dynamic characteristics
Symbol Conditions
IPB60R600CP
min.
Values
typ.
Unit
max.
Input capacitance
Output capacitance
C iss V GS=0 V, V DS=100 V, - 550 - pF
C oss
f =1 MHz
- 28 -
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
C o(tr)
V GS=0 V, V DS=0 V
to 480 V
- 26 -
- 67 -
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t d(on)
- 17 - ns
t r V DD=400 V,
- 12 -
V GS=10 V, I D=3.3 A,
t d(off)
R G=23.1
- 75 -
t f - 17 -
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd
Qg
V plateau
V DD=480 V, I D=3.3 A,
V GS=0 to 10 V
-
-
-
-
2 - nC
10 -
21 27
4.7 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=3.3 A,
T j=25 °C
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 0.8 1.2 V
- 220 - ns
- 2.3 - µC
- 18 - A
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
4) ISD=ID, di/dt400A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev.2.0
page 3
2008-02-15



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