IPB60R600CP

IPB60R600CP CoolMOSTM Power Transistor Features Lowest figure-of-merit R ON x Qg Ultra low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max @ Tj =25°C Q g,typ 650 0.6 21 V Ω nC PG-TO263 CoolMOS CP is designed for: Hard switching SMPS topologies Type IPB60R600CP Package PG-TO263 Marking 6R600P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=2.2 A, V DD=50 V I D=2.2 A, V DD=50 V Value 6.1 3.8 15 144 0.2 2.2 50 ±20 ±30 60 -55 ... 150 W °C A V/ns V mJ Unit A www.DataSheet4U.net Rev.2.0 page 1 2008-02-15 IPB60R600CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Parameter Symbol Conditions IS I S,pulse dv /dt Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case R thJC R thJA leaded SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm...