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Power Transistor. IPD640N06LG Datasheet

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Power Transistor. IPD640N06LG Datasheet






IPD640N06LG Transistor. Datasheet pdf. Equivalent




IPD640N06LG Transistor. Datasheet pdf. Equivalent





Part

IPD640N06LG

Description

Power Transistor

Manufacture

Infineon Technologies

Datasheet
Download IPD640N06LG Datasheet


Infineon Technologies IPD640N06LG

IPD640N06LG; IPD640N06L G OptiMOS® Power-Transistor Features • For fast switching conver ters and sync. rectification • N-chan nel enhancement - logic level • 175 C operating temperature • Avalanche rated • Pb-free lead plating, RoHS co mpliant Product Summary V DS R DS(on), max ID 60 64 18 V mΩ A Type IPD640N 06L G Type Package IPD640N06L G Markin g PG-TO252-3 640N06L PG-TO252-3.


Infineon Technologies IPD640N06LG

Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuo us drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain curr ent Avalanche energy, single pulse Reve rse diode d v /dt Gate source voltage P ower dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 18 12 72 43 6 ±20 Unit A I D,pulse E AS.


Infineon Technologies IPD640N06LG

dv /dt V GS P tot T j, T stg T C=25 ° C1) I D=18 A, R GS=25 Ω I D=18 A, V D S=20 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 47 -55 ... 175 55/175/56 See figure 3 ww w.DataSheet4U.net Rev. 1.4 page 1 20 08-09-01 IPD640N06L G Parameter Symbol Conditions min. Thermal characteristic s Thermal resistance, junction - case S MD version, device on PCB .



Part

IPD640N06LG

Description

Power Transistor

Manufacture

Infineon Technologies

Datasheet
Download IPD640N06LG Datasheet




 IPD640N06LG
OptiMOS® Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - logic level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
Product Summary
V DS
R DS(on),max
ID
IPD640N06L G
60 V
64 m
18 A
Type
IPD640N06L G
TPyapcekage
IMPaDr6k4in0gN06L G
PG-TO252-3
640NP0G6L-TO252-3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C1)
Avalanche energy, single pulse
E AS I D=18 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=18 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) See figure 3
www.DRateavS.he1e.t44U.net
page 1
Value
18
12
72
43
6
±20
47
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2008-09-01





 IPD640N06LG
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm2 cooling area2)
IPD640N06L G
min.
Values
typ.
Unit
max.
- - 3.2 K/W
- - 75
- - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=16 µA
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
V DS=60 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
RG
V GS=20 V, V DS=0 V
V GS=10 V, I D=18 A
V GS=4.5 V, I D=12 A
g fs
|V DS|>2|I D|R DS(on)max,
I D=18 A
60
1.2
-
-
-
-
-
-
9.5
-
1.6
0.01
1
10
47
64
1.2
19
-V
2
1 µA
100
100 nA
64 m
85
-
-S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.4
page 2
2008-09-01





 IPD640N06LG
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics3)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
IPD640N06L G
min.
Values
typ.
Unit
max.
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=30 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=15 A, R G=22
-
-
-
-
-
-
-
350 470 pF
94 130
35 53
6 8 ns
25 38
32 48
32 48
Q gs - 1.4 1.9 nC
Q g(th)
- 0.5 0.7
Q gd V DD=30 V, I D=18 A, - 3.6 5.4
Q sw
V GS=0 to 10 V
- 4.5 6.5
Q g - 10 13
V plateau
- 4.2 - V
Q oss
V DD=30 V, V GS=0 V
-
3
4
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=18 A,
T j=25 °C
t rr
V R=30 V, I F=I S,
di F/dt =100 A/µs
Q rr
- - 18 A
- - 72
-
0.99
1.3 V
- 30 45 ns
- 20 30 nC
3) See figure 16 for gate charge parameter definition
Rev. 1.4
page 3
2008-09-01



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