IPD64CN10N G IPU64CN10N G
OptiMOS®2 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max ID 100 64 17 V mΩ A
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