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Power Transistor. IPU64CN10NG Datasheet

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Power Transistor. IPU64CN10NG Datasheet






IPU64CN10NG Transistor. Datasheet pdf. Equivalent




IPU64CN10NG Transistor. Datasheet pdf. Equivalent





Part

IPU64CN10NG

Description

Power Transistor

Manufacture

Infineon Technologies

Datasheet
Download IPU64CN10NG Datasheet


Infineon Technologies IPU64CN10NG

IPU64CN10NG; IPD64CN10N G IPU64CN10N G OptiMOS®2 Po wer-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low o n-resistance R DS(on) • 175 °C opera ting temperature • Pb-free lead plati ng; RoHS compliant • Qualified accord ing to JEDEC1) for target application Product Summary V DS R DS(on),max ID 10 0 64 17 V mΩ A • Ideal for high.


Infineon Technologies IPU64CN10NG

-frequency switching and synchronous rec tification Type IPD64CN10N G IPU64CN10N G Package Marking PG-TO252-3 64CN10N PG-TO251-3 64CN10N Maximum ratings, at T j=25 °C, unless otherwise specifi ed Parameter Continuous drain current S ymbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche en ergy, single pulse Reverse diode d v /d t Gate source voltage.


Infineon Technologies IPU64CN10NG

3) Power dissipation Operating and stora ge temperature IEC climatic category; D IN IEC 68-1 1) 2) Value 17 13 68 34 6 ±20 Unit A I D,pulse E AS dv /dt V G S P tot T j, T stg T C=25 °C I D=17 A , R GS=25 Ω I D=17 A, V DS=80 V, di / dt =100 A/µs, T j,max=175 °C mJ kV/ s V W °C T C=25 °C 44 -55 ... 175 55/175/56 J-STD20 and JESD22 see figur e 3 3) T jmax=150°C and d.



Part

IPU64CN10NG

Description

Power Transistor

Manufacture

Infineon Technologies

Datasheet
Download IPU64CN10NG Datasheet




 IPU64CN10NG
OptiMOS®2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPD64CN10N G
IPU64CN10N G
IPD64CN10N G
IPU64CN10N G
100 V
64 m
17 A
Package
Marking
PG-TO252-3
64CN10N
PG-TO251-3
64CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=17 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=17 A, V DS=80 V,
di /dt =100 A/µs,
T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
3) T jmax=150°C and duty cycle D =0.01 for V GS<-5V
www.DRateavS.he1e.t041U.net
page 1
Value
17
13
68
34
6
±20
44
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-02-21





 IPU64CN10NG
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient (TO252)
minimal footprint
6 cm² cooling area4)
IPD64CN10N G
IPU64CN10N G
min.
Values
typ.
Unit
max.
- - 3.4 K/W
- - 75
- - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=20 µA
I DSS
V DS=80 V, V GS=0 V,
T j=25 °C
100
2
-
-
3
0.1
-V
4
1 µA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V DS=80 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
RG
V GS=20 V, V DS=0 V
V GS=10 V, I D=17 A
g fs
|V DS|>2|I D|R DS(on)max,
I D=17 A
-
-
-
-
8
10 100
1 100 nA
45 64 m
1.6 -
15 - S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.01
page 2
2006-02-21





 IPU64CN10NG
Parameter
Symbol Conditions
IPD64CN10N G
IPU64CN10N G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=50 V,
f =1 MHz
V DD=50 V, V GS=10 V,
I D=17 A, R G=1.6
-
-
-
-
-
-
-
428 569 pF
132 176
6 10
7 11 ns
34
9 14
24
Gate Charge Characteristics5)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs - 3 4 nC
Q gd - 2 3
Q sw
V DD=50 V, I D=17 A,
V GS=0 to 10 V
-
3
4
Qg - 6 9
V plateau
- 6.3 - V
Q oss
V DD=50 V, V GS=0 V
-
13 18 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
V SD
t rr
Q rr
T C=25 °C
V GS=0 V, I F=17 A,
T j=25 °C
V R=50 V, I F=I S,
di F/dt =100 A/µs
- - 17 A
- - 68
- 1 1.2 V
- 70
ns
- 120 - nC
5) See figure 16 for gate charge parameter definition
Rev. 1.01
page 3
2006-02-21



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