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Power Transistor. IPP600N25N3G Datasheet

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Power Transistor. IPP600N25N3G Datasheet






IPP600N25N3G Transistor. Datasheet pdf. Equivalent




IPP600N25N3G Transistor. Datasheet pdf. Equivalent





Part

IPP600N25N3G

Description

Power Transistor



Feature


IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excell ent gate charge x R DS(on) product (FOM ) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb- free lead plating; RoHS compliant • Qualified according to JEDEC1) for targ et application • Halogen-free .
Manufacture

Infineon Technologies

Datasheet
Download IPP600N25N3G Datasheet


Infineon Technologies IPP600N25N3G

IPP600N25N3G; according to IEC61249-2-21 • Ideal fo r high-frequency switching and synchron ous rectification 250 V 60 mW 25 A Ty pe IPB600N25N3 G IPP600N25N3 G IPI600N 25N3 G Package Marking PG-TO263-3 600 N25N PG-TO220-3 600N25N PG-TO262-3 60 0N25N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous dr ain current Pulsed dr.


Infineon Technologies IPP600N25N3G

ain current2) Avalanche energy, single p ulse Reverse diode dv /dt ID I D,pulse E AS T C=25 °C T C=100 °C T C=25 ° C I D=25 A, R GS=25 W dv /dt Gate sou rce voltage V GS Power dissipation P tot T C=25 °C Operating and storage tempera .


Infineon Technologies IPP600N25N3G

.

Part

IPP600N25N3G

Description

Power Transistor



Feature


IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excell ent gate charge x R DS(on) product (FOM ) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb- free lead plating; RoHS compliant • Qualified according to JEDEC1) for targ et application • Halogen-free .
Manufacture

Infineon Technologies

Datasheet
Download IPP600N25N3G Datasheet




 IPP600N25N3G
IPB600N25N3 G IPP600N25N3 G
IPI600N25N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
250 V
60 mW
25 A
Type
IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G
Package
Marking
PG-TO263-3
600N25N
PG-TO220-3
600N25N
PG-TO262-3
600N25N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Reverse diode dv /dt
ID
I D,pulse
E AS
T C=25 °C
T C=100 °C
T C=25 °C
I D=25 A, R GS=25 W
dv /dt
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
25
18
100
210
10
±20
136
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.3
page 1
2011-07-14




 IPP600N25N3G
IPB600N25N3 G IPP600N25N3 G
IPI600N25N3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
-
- 1.1 K/W
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=90 µA
I DSS
V DS=200 V, V GS=0 V,
T j=25 °C
250
2
-
-
3
0.1
-V
4
1 µA
Gate-source leakage current
I GSS
V DS=200 V, V GS=0 V,
T j=125 °C
V GS=20 V, V DS=0 V
-
-
10 100
1 100 nA
Drain-source on-state resistance
R DS(on) V GS=10 V, I D=25 A
-
51 60 mW
Gate resistance
Transconductance
R G - 2.5
g fs
|V DS|>2|I D|R DS(on)max,
I D=25 A
24
47
-W
-S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.3
page 2
2011-07-14




 IPP600N25N3G
Parameter
Symbol Conditions
IPB600N25N3 G IPP600N25N3 G
IPI600N25N3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V DD=100 V,
V GS=10 V, I D=12 A,
R G=1.6 W
-
-
-
-
-
-
-
1770
112
3
10
10
22
8
2350 pF
149
-
- ns
-
-
-
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
Q gd
Q sw
V DD=100 V, I D=12 A,
V GS=0 to 10 V
Qg
V plateau
Q oss
V DD=100 V, V GS=0 V
-
-
-
-
-
-
8 - nC
2-
5-
22 29
4.3 - V
45 60 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=25 A,
T j=25 °C
t rr V R=100 V, I F=12A ,
Q rr di F/dt =100 A/µs
4) See figure 16 for gate charge parameter definition
- - 25 A
- - 100
- 1 1.2 V
- 127 - ns
- 604 - nC
Rev. 2.3
page 3
2011-07-14






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