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Power Transistor. IPP60R099CPA Datasheet

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Power Transistor. IPP60R099CPA Datasheet






IPP60R099CPA Transistor. Datasheet pdf. Equivalent




IPP60R099CPA Transistor. Datasheet pdf. Equivalent





Part

IPP60R099CPA

Description

Power Transistor

Manufacture

Infineon Technologies

Datasheet
Download IPP60R099CPA Datasheet


Infineon Technologies IPP60R099CPA

IPP60R099CPA; IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS(on),max Q g ,typ 600 0.105 60 V Ω nC Features • Worldwide best R ds,on in TO220 • Ul tra low gate charge • Extreme dv/dt r ated • High peak current capability Automotive AEC Q101 qualified • Gr een package (RoHS compliant) CoolMOS CP A is specially designed for: • DC/DC converters for Automotive Applica.


Infineon Technologies IPP60R099CPA

tions PG-TO220-3-1 Type IPP60R099CPA P ackage PG-TO220-3-1 Marking 6R099A Ma ximum ratings, at T j=25 °C, unless ot herwise specified Parameter Continuous drain current Symbol Conditions ID T C= 25 °C T C=100 °C Pulsed drain current 1) Avalanche energy, single pulse Avala nche energy, repetitive t AR1),2) Avala nche current, repetitive t AR1),2) MOSF ET dv /dt ruggedness .


Infineon Technologies IPP60R099CPA

Gate source voltage Power dissipation Op erating temperature Storage temperature Mounting torque www.DataSheet4U.net V alue 31 19 93 800 1.2 11 Unit A I D,p ulse E AS E AR I AR dv /dt V GS P tot T j T stg T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V mJ A V/ns V W ° C V DS=0...480 V static T C=25 °C 50 ±20 255 -40 ... 150 -40 ... 150 M3 a nd M3.5 screws page 1 .



Part

IPP60R099CPA

Description

Power Transistor

Manufacture

Infineon Technologies

Datasheet
Download IPP60R099CPA Datasheet




 IPP60R099CPA
CoolMOSTM Power Transistor
Features
• Worldwide best R ds,on in TO220
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
CoolMOS CPA is specially designed for:
• DC/DC converters for Automotive Applications
Product Summary
V DS
R DS(on),max
Q g,typ
IPP60R099CPA
600 V
0.105 Ω
60 nC
PG-TO220-3-1
Type
IPP60R099CPA
Package
Marking
PG-TO220-3-1 6R099A
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
Pulsed drain current1)
I D,pulse
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
1),2)
AR
Avalanche
current,
repetitive
t
1),2)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
I D=11 A, V DD=50 V
I D=11 A, V DD=50 V
V DS=0...480 V
Gate source voltage
V GS static
Power dissipation
P tot T C=25 °C
Operating temperature
Tj
Storage temperature
T stg
Mounting torque
M3 and M3.5 screws
www.DRateavS.he2e.t24U.net
page 1
Value
31
19
93
800
1.2
11
50
±20
255
-40 ... 150
-40 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2009-11-25





 IPP60R099CPA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current1)
Reverse diode dv /dt 3)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPP60R099CPA
Value
18
93
15
Unit
A
V/ns
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
Soldering temperature,
wavesoldering only allowed at leads
T sold
leaded
1.6 mm (0.063 in.)
from case for 10 s
- - 0.5 K/W
- - 62
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=1.2 mA
2.5
3
3.5
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=18 A,
T j=25 °C
V GS=10 V, I D=18 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
-
-
- 5 µA
- 100 nA
0.09 0.105 Ω
0.24
1.3
-
-Ω
Rev. 2.2
page 2
2009-11-25





 IPP60R099CPA
IPP60R099CPA
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
C iss
C oss
Effective output capacitance, energy
related4)
C o(er)
Effective output capacitance, time
related5)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C o(tr)
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=18 A,
R G=3.3 Ω
-
-
-
-
-
-
-
-
2800
130
130
340
10
5
60
5
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd V DD=400 V, I D=18 A,
Q g V GS=0 to 10 V
V plateau
-
-
-
-
14 - nC
20 -
60 80
5.0 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=18 A,
T j=25 °C
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 0.9 1.2 V
- 450 - ns
- 12 - µC
- 70 - A
1) Pulse width t p limited by T j,max
2) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
3) I SD<=I D, di /dt <=100A/µs,V DClink = 400V, V peak<V (BR)DSS, T j<T jmax, identical low side and high side switch
4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.2
page 3
2009-11-25



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