DatasheetsPDF.com

MOSFET. IPP60R280E6 Datasheet

DatasheetsPDF.com

MOSFET. IPP60R280E6 Datasheet






IPP60R280E6 MOSFET. Datasheet pdf. Equivalent




IPP60R280E6 MOSFET. Datasheet pdf. Equivalent





Part

IPP60R280E6

Description

MOSFET



Feature


MOSFET MetalOxideSemiconductorFieldE ffectTransistor CoolMOS™E6600V 600 VCoolMOS™E6PowerTransistor IPx60R 280E6 DataSheet Rev.2.2 Final PowerM anagement&Multimarket 600V CoolMOS" E6 Power Transistor IPP60R280E6, IPA60 R280E6 IPW60R280E6 1 Description CoolM OS" is a revolutionary technology for h igh voltage power MOSFETs, designed acc ording to the superjun.
Manufacture

Infineon Technologies

Datasheet
Download IPP60R280E6 Datasheet


Infineon Technologies IPP60R280E6

IPP60R280E6; ction (SJ) principle and pioneered by In fineon Technologies. CoolMOS" E6 series combines the experience of the leading SJ MOSFET supplier with high class inn ovation. The offered devices provide al l benefits of a fast switching SJ MOSFE T while not sacrificing ease of use. Ex tremely low switching and conduction lo sses make switching applications even m ore efficient, mor.


Infineon Technologies IPP60R280E6

e compact, lighter, and cooler. Features • Extremely low losses due to very l ow FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/ drive • JEDEC1) qualified, Pb-free pl ating, Halogen free Applications PFC st ages, hard switching PWM stages and res onant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Light ing, Server, Telecom and U.


Infineon Technologies IPP60R280E6

PS. Please note: For MOSFET paralleling the use of ferrite beads on the gate o r separate totem poles is generally rec ommended. Table 1 Key Performance Para meters Parameter Value Unit VDS @ T j,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt 650 0.28 43 40 3.7 500 V ! nC A µJ A/µs drain pin 2 gate pin 1 source pin 3 Type / Or dering Code IPW60R28.

Part

IPP60R280E6

Description

MOSFET



Feature


MOSFET MetalOxideSemiconductorFieldE ffectTransistor CoolMOS™E6600V 600 VCoolMOS™E6PowerTransistor IPx60R 280E6 DataSheet Rev.2.2 Final PowerM anagement&Multimarket 600V CoolMOS" E6 Power Transistor IPP60R280E6, IPA60 R280E6 IPW60R280E6 1 Description CoolM OS" is a revolutionary technology for h igh voltage power MOSFETs, designed acc ording to the superjun.
Manufacture

Infineon Technologies

Datasheet
Download IPP60R280E6 Datasheet




 IPP60R280E6
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™E6600V
600VCoolMOS™E6PowerTransistor
IPx60R280E6
DataSheet
Rev.2.2
Final
PowerManagement&Multimarket




 IPP60R280E6
600V CoolMOS" E6 Power Transistor
IPP60R280E6, IPA60R280E6
IPW60R280E6
1 Description
CoolMOS" is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOS" E6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter, and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-free plating, Halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on
the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ
ID,pulse
Eoss @ 400V
Body diode di/dt
650
0.28
43
40
3.7
500
V
!
nC
A
µJ
A/µs
drain
pin 2
gate
pin 1
source
pin 3
Type / Ordering Code
IPW60R280E6
IPP60R280E6
IPA60R280E6
Package
PG-TO247
PG-TO220
PG-TO220 FullPAK
Marking
6R280E6
Related Links
IFX CoolMOS Webpage
IFX Design tools
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.2, 2014-12-09




 IPP60R280E6
600V CoolMOS" E6 Power Transistor
IPx60R280E6
Table of Contents
Table of Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Final Data Sheet
3 Rev. 2.2, 2014-12-09






Recommended third-party IPP60R280E6 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)