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EFFECT TRANSISTOR. UP2003 Datasheet

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EFFECT TRANSISTOR. UP2003 Datasheet






UP2003 TRANSISTOR. Datasheet pdf. Equivalent




UP2003 TRANSISTOR. Datasheet pdf. Equivalent





Part

UP2003

Description

P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR



Feature


UNISONIC TECHNOLOGIES CO., LTD UP2003 P- CHANNEL LOGIC LEVEL ENHANCEMENT MODE FI ELD EFFECT TRANSISTOR „ DESCRIPTION P ower MOSFET The UP2003 uses advanced t rench technology to provide excellent R DS(ON), low gate charge and operation w ith low gate voltages. This device is s uitable for use as a load switch or in PWM applications. „ FEATURES * VDS( V)=-25V * ID=-9 A * .
Manufacture

UTC

Datasheet
Download UP2003 Datasheet


UTC UP2003

UP2003; RDS(ON)<35 mΩ@ VGS =-4.5 V, ID =-7 A * RDS(ON)<20 mΩ@ VGS =-10 V, ID =-9 A *Pb-free plating product number: UP200 3L „ SYMBOL 2.Drain 1.Gate 3.Sourc e „ ORDERING INFORMATION Ordering Nu mber Normal Lead Free Plating UP2003-TN 3-R UP2003L-TN3-R UP2003-TN3-T UP2003L- TN3-T Package TO-252 TO-252 Pin Assignm ent 1 2 3 G D S G D S Packing Tape Reel Tube www.unisonic.com..


UTC UP2003

tw Copyright © 2008 Unisonic Technologi es Co., Ltd www.DataSheet4U.net 1 of 5 QW-R502-202.B UP2003 „ ABSOLUTE MAXI MUM RATINGS (TC = 25°C, unless otherwi se specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Gate Source voltage VGSS ±20 V Continuous Drain Current I D -9 A Pulsed Drain Current (Note 1) ID M -50 Power Dissipation PD 2.5 W Juncti on Temperature +150 TJ.


UTC UP2003

°C Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are tho se values beyond which the device could be permanently damaged. Absolute maxim um ratings are stress ratings only and functional device operation is not impl ied. „ THERMAL DATA PARAMETER SYMBOL θJA θJC MIN TYP MAX 50 25 UNIT °C/W °C/W Junction-to-Ambient Junction-to -Case „ ELECTRICAL CHA.

Part

UP2003

Description

P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR



Feature


UNISONIC TECHNOLOGIES CO., LTD UP2003 P- CHANNEL LOGIC LEVEL ENHANCEMENT MODE FI ELD EFFECT TRANSISTOR „ DESCRIPTION P ower MOSFET The UP2003 uses advanced t rench technology to provide excellent R DS(ON), low gate charge and operation w ith low gate voltages. This device is s uitable for use as a load switch or in PWM applications. „ FEATURES * VDS( V)=-25V * ID=-9 A * .
Manufacture

UTC

Datasheet
Download UP2003 Datasheet




 UP2003
UNISONIC TECHNOLOGIES CO., LTD
UP2003
P-CHANNEL LOGIC LEVEL
ENHANCEMENT MODE FIELD
EFFECT TRANSISTOR
Power MOSFET
„ DESCRIPTION
The UP2003 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
„ FEATURES
* VDS(V)=-25V
* ID=-9 A
* RDS(ON)<35 m@ VGS =-4.5 V, ID =-7 A
* RDS(ON)<20 m@ VGS =-10 V, ID =-9 A
„ SYMBOL
2.Drain
*Pb-free plating product number: UP2003L
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
UP2003-TN3-R
UP2003L-TN3-R
UP2003-TN3-T
UP2003L-TN3-T
Package
TO-252
TO-252
Pin Assignment
123
GDS
GDS
Packing
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
www.DataSheet4U.net
1 of 5
QW-R502-202.B




 UP2003
UP2003
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate Source voltage
VGSS
±20
V
Continuous Drain Current
Pulsed Drain Current (Note 1)
ID -9
IDM -50
A
Power Dissipation
PD 2.5 W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
Junction-to-Ambient
Junction-to-Case
PARAMETER
SYMBOL
θJA
θJC
MIN
TYP
„ ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
MAX
50
25
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain Source Leakage Current
Gate-Body Leakage Current
BVDSS
IDSS
IGSS
VGS =0 V, ID=-250µA
VDS =-24 V, VGS =0 V
VDS =-20 V, VGS =0 V
VDS =0 V, VGS =±20V
ON CHARACTERISTICS
Gate-Threshold Voltage
On-State Drain Current (Note 2)
Drain-Source On-Resistance (Note 2)
VGS(TH)
ID(ON)
RDS(ON)
VDS =VGS, ID =-250 µA
VDS = -5V, VGS = -10V
VGS =-4.5 V, ID =-7 A
VGS =-10 V, ID =-9 A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 3)
Gate to Source Charge
Gate Charge at Threshold
Gate to Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-ON Delay Time
Turn-OFF Fall-Time
CISS
COSS
CRSS
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tD(ON)
tF
VDS =-15 V, VGS =0V, f=1MHz
VDS =-0.5V(BR)DSS, VGS =-10 V,
ID =-9 A
VDS =-15V, ID-1A, VGS =-10V,
RGS =6,RL=1
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Continuous Forward Current
IS
Diode Pulse Current (Note 1)
ISM
Forward Voltage (Note 2)
VSD IF=IS, VGS=0 V
Note: 1. Pulse width limited by maximum junction temperature.
2. Pulse test: Pulse Width 300μsec, Duty Cycle 2%
3. Independent of operating temperature.
MIN TYP MAX UNIT
-25 V
-1
-10
µA
±100 nA
-1.0 -1.5 -3.0 V
-50 A
25
15
35
20
m
1610
410
200
pF
17 24
5 nC
6
6.2 9.3
10
18 ns
10
5
-2.1
-4
A
-1.2 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-202.B




 UP2003
UP2003
„ TYPICAL CHARACTERISTICS
Power MOSFET
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
On-Resistance vs. Drain Current
and Gate Voltage
VGS=-3.5V
-4.0V
-4.5V
-5V
-6V
-7V
-10V
10 20 30 40
Drain Current,-ID (A)
50
On-Resistance vs. Junction Temperature
1.6 ID=-9A
VGS=-10V
1.4
1.2
1
0.8
0.6
-50 -25
0 25 50 75 100 125 150 175
Junction Temperature (°С)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-202.B






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