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Side Driver. NCV8402 Datasheet

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Side Driver. NCV8402 Datasheet






NCV8402 Driver. Datasheet pdf. Equivalent




NCV8402 Driver. Datasheet pdf. Equivalent





Part

NCV8402

Description

Self-Protected Low Side Driver

Manufacture

ON Semiconductor

Datasheet
Download NCV8402 Datasheet


ON Semiconductor NCV8402

NCV8402; Self-Protected Low Side Driver with Temp erature and Current Limit NCV8402, NCV 8402A NCV8402/A is a three terminal pro tected Low−Side Smart Discrete device . The protection features include overc urrent, overtemperature, ESD and integr ated Drain−to−Gate clamping for ove rvoltage protection. This device offers protection and is suitable for harsh a utomotive environments. .


ON Semiconductor NCV8402

Features • Short−Circuit Protection • Thermal Shutdown with Automatic Res tart • Overvoltage Protection • Int egrated Clamp for Inductive Switching ESD Protection • NCV8402AMNWT1G Wettable Flanks Product • dV/dt Rob ustness • Analog Drive Capability (Lo gic Level Input) • NCV Prefix for Aut omotive and Other Applications Requirin g Unique Site and Control Change Require.


ON Semiconductor NCV8402

ments; AEC−Q101 Qualified and PPAP Cap able • These Devices are Pb−Free an d are RoHS Compliant Typical Applicatio ns • Switch a Variety of Resistive, I nductive and Capacitive Loads • Can R eplace Electromechanical Relays and Dis crete Circuits • Automotive / Industr ial Drain Gate Input Overvoltage Prot ection ESD Protection Temperature Cur rent Current Limit Limit Se.



Part

NCV8402

Description

Self-Protected Low Side Driver

Manufacture

ON Semiconductor

Datasheet
Download NCV8402 Datasheet




 NCV8402
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8402, NCV8402A
NCV8402/A is a three terminal protected LowSide Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated DraintoGate clamping for overvoltage
protection. This device offers protection and is suitable for harsh
automotive environments.
Features
ShortCircuit Protection
Thermal Shutdown with Automatic Restart
Overvoltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
NCV8402AMNWT1G Wettable Flanks Product
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements;
AECQ101 Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
Typical Applications
Switch a Variety of Resistive, Inductive and Capacitive Loads
Can Replace Electromechanical Relays and Discrete Circuits
Automotive / Industrial
Drain
Gate
Input
Overvoltage
Protection
ESD Protection
Temperature Current Current
Limit
Limit
Sense
Source
© Semiconductor Components Industries, LLC, 2016
October, 2019 Rev. 26
1
www.onsemi.com
V(BR)DSS
(Clamped)
42 V
RDS(ON) TYP
165 mW @ 10 V
ID MAX
2.0 A*
*Max current limit value is dependent on input
condition.
MARKING DIAGRAMS
DRAIN
4 SOT223
4
AYW
123
CASE 318E
STYLE 3
1
xxxxx G
G
23
GATE
SOURCE
DRAIN
1 xxxxx
DFN6
AYWW
1 CASE 506AX
G
DFN6 (WF)
CASE 506DK
1 xxxxx
AYWW
G
1
A = Assembly Location
Y = Year
W or WW = Work Week
xxxxx = V8402 or 8402A
G = PbFree Package
(Note: Microdot may be in either location)
DFN6 PACKAGE PIN DESCRIPTION
G NC NC
123
7
EPAD
654
S SS
Pin #
1
2
3
4
5
6
7
Symbol
G
NC
NC
S*
S*
S*
EPAD
Description
Gate Input
No Connect
No Connect
Source
Source
Source
Drain
*Pins 4, 5, 6 are internally shorted together.
It is recommended to short these pins externally.
ORDERING INFORMATION
See detailed ordering and shipping information on page 11 of
this data sheet.
Publication Order Number:
NCV8402/D





 NCV8402
NCV8402, NCV8402A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage Internally Clamped
DraintoGate Voltage Internally Clamped
GatetoSource Voltage
Continuous Drain Current
Total Power Dissipation SOT223 Version
Total Power Dissipation DFN Version
Maximum Continuous Drain Current SOT223 Version
(RG = 1.0 MW)
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TS = 25°C)
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TS = 25°C)
@
@
TTAA
=
=
25°C
25°C
(Note
(Note
1)
2)
@ TS = 25°C)
VDSS
VDGR
VGS
ID
PD
PD
ID
42 V
42 V
±14 V
Internally Limited
1.1 W
1.74
8.9
0.76 W
1.78
8.9
1.54 A
1.94
6.75
Maximum Continuous Drain Current DFN Version
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TS = 25°C)
Thermal Resistance
SOT223 JunctiontoAmbient Steady State (Note 1)
SOT223 JunctiontoAmbient Steady State (Note 2)
SOT223 JunctiontoSoldering Point Steady State
ID
RRqqJJAA
RqJS
1.28 A
1.97
6.75
114 °C/W
72
14
DFN JunctiontoAmbient Steady State (Note 1)
DFN JunctiontoAmbient Steady State (Note 2)
DFN JunctiontoSoldering Point Steady State
Single Pulse DraintoSource Avalanche Energy
(VDD = 32 V, VG = 5.0 V, IPK = 1.0 A, L = 300 mH, RG(ext) = 25 W)
RRRqqqJJJAAS
EAS
163
70
14
150 mJ
Load Dump Voltage
(VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms)
VLD
55 V
Operating Junction Temperature
TJ
40 to 150
°C
Storage Temperature
Tstg
55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surfacemounted onto min pad FR4 PCB, (2 oz. Cu, 0.06thick).
2. Surfacemounted onto 2sq. FR4 board (1sq., 1 oz. Cu, 0.06thick).
+
ID
IG
+
VGS
GATE
DRAIN
SOURCE
VDS
−−
Figure 1. Voltage and Current Convention
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2





 NCV8402
NCV8402, NCV8402A
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Test Condition
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
VGS = 0 V, ID = 10 mA, TJ = 25°C
V(BR)DSS
42
46
55
(Note 3)
VGS = 0 V, ID = 10 mA, TJ = 150°C
40 45 55
(Note 5)
V
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
VGS = 0 V, VDS = 32 V, TJ = 25°C
VGS = 0 V, VDS = 32 V, TJ = 150°C
(Note 5)
IDSS
IDSS
0.25 4.0
1.1 20
mA
mA
Gate Input Current
ON CHARACTERISTICS (Note 3)
VDS = 0 V, VGS = 5.0 V
IGSSF
50 100 mA
Gate Threshold Voltage
VGS = VDS, ID = 150 mA
VGS(th)
1.3 1.8 2.2
V
Gate Threshold Temperature Coefficient
VGS(th)/TJ
4.0 mV/°C
Static DraintoSource OnResistance VGS = 10 V, ID = 1.7 A, TJ = 25°C
RDS(on)
165 200 mW
VGS = 10 V, ID = 1.7 A, TJ = 150°C
(Note 5)
305 400
VGS = 5.0 V, ID = 1.7 A, TJ = 25°C
VGS = 5.0 V, ID = 1.7 A, TJ = 150°C
(Note 5)
195 230
360 460
VGS = 5.0 V, ID = 0.5 A, TJ = 25°C
VGS = 5.0 V, ID = 0.5 A, TJ = 150°C
(Note 5)
190 230
350 460
SourceDrain Forward On Voltage
SWITCHING CHARACTERISTICS (Note 5)
VGS = 0 V, IS = 7.0 A
VSD
1.0 V
TurnOn Time (10% VIN to 90% ID)
ton 25 30 ms
TurnOff Time (90% VIN to 10% ID)
toff
120 200
ms
TurnOn Rise Time (10% ID to 90% ID)
TurnOff Fall Time (90% ID to 10% ID)
VGS = 10 V, VDD = 12 V,
ID = 2.5 A, RL = 4.7 W
trise
tfall
20 25 ms
50 70 ms
SlewRate ON (70% to 50% VDD)
dVDS/dtON
0.8 1.2 V/ms
SlewRate OFF (50% to 70% VDD)
dVDS/dtOFF
0.3 0.5 V/ms
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4)
Current Limit
VDS = 10 V, VGS = 5.0 V, TJ = 25°C
ILIM
3.7 4.3 5.0
A
VDS = 10 V, VGS = 5.0 V, TJ = 150°C
(Note 5)
2.3 3.0 3.7
VDS = 10 V, VGS = 10 V, TJ = 25°C
VDS = 10 V, VG(NSo=te150)V, TJ = 150°C
4.2 4.8 5.4
2.7 3.6 4.5
Temperature Limit (Turnoff)
Thermal Hysteresis
Temperature Limit (Turnoff)
Thermal Hysteresis
GATE INPUT CHARACTERISTICS (Note 5)
VGS = 5.0 V (Note 5)
VGS = 5.0 V
VGS = 10 V (Note 5)
VGS = 10 V
TLIM(off)
DTLIM(on)
TLIM(off)
DTLIM(on)
150 175 200
15
150 165 185
15
°C
Device ON Gate Input Current
VGS = 5 V ID = 1.0 A
VGS = 10 V ID = 1.0 A
Current Limit Gate Input Current
VGS = 5 V, VDS = 10 V
VGS = 10 V, VDS = 10 V
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
IGON
IGCL
50 mA
400
0.05 mA
0.4
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3



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