NTD4965N

NTD4965N MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 68 A Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications CPU Power Delivery DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VDSS 30 V VGS ±20 V TA = 25°C ID 17.8 A TA = 100°C 12.6 Power Dissipation RqJA (Note 1) TA = 25°C PD 2.6 W Continuous Drain TA = 25°C ID Current RqJA (Note 2) Steady TA = 100°C Power State TA = 25°C PD Dissipation RqJA (Note 2) 13.0 A 9.2 1.39 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID TC = 100°C 68 A 48 Power Dissipation RqJC (Note 1) TC = 25°C PD 38.5 W Pulsed Drain Current tp=10ms TA = 25°C IDM 248 A Current Limited by Package TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V, IL = 31 Apk, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IDmaxPkg TJ, TSTG IS dV/dt EAS TL 76 −55 to +175 35 6.0 47 260 A °C A V/ns mJ °C Stresses exceeding those listed in the Maximum Ratings table may da...