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Power MOSFET. NTD4965N Datasheet

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Power MOSFET. NTD4965N Datasheet






NTD4965N MOSFET. Datasheet pdf. Equivalent




NTD4965N MOSFET. Datasheet pdf. Equivalent





Part

NTD4965N

Description

Power MOSFET

Manufacture

ON Semiconductor

Datasheet
Download NTD4965N Datasheet


ON Semiconductor NTD4965N

NTD4965N; NTD4965N Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to M inimize Driver Losses Optimized Gate Ch arge to Minimize Switching Losses Three Package Variations for Design Flexibil ity These Devices are Pb−Free, Haloge n Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS 30 V.


ON Semiconductor NTD4965N

RDS(ON) MAX 4.7 mW @ 10 V 10 mW @ 4.5 V D ID MAX 68 A Applications • CPU P ower Delivery • DC−DC Converters MA XIMUM RATINGS (TJ = 25°C unless otherw ise stated) Parameter Drain−to−Sour ce Voltage Gate−to−Source Voltage C ontinuous Drain Current RqJA (Note 1) P ower Dissipation RqJA (Note 1) Continuo us Drain Current RqJA (Note 2) Power Di ssipation RqJA (Note 2) Continuou.


ON Semiconductor NTD4965N

s Drain Current RqJC (Note 1) Power Diss ipation RqJC (Note 1) Pulsed Drain Curr ent tp=10ms TA = 25°C TA = 100°C TA = 25°C TA = 25°C Steady State TA = 100 °C TA = 25°C TC = 25°C TC = 100°C T C = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 17 .8 12.6 2.6 W 4 13.0 9.2 1.39 W A 1 2 U nit V V A G S N−CHANNEL MOSFE.



Part

NTD4965N

Description

Power MOSFET

Manufacture

ON Semiconductor

Datasheet
Download NTD4965N Datasheet




 NTD4965N
NTD4965N
Power MOSFET
30 V, 68 A, Single NChannel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Three Package Variations for Design Flexibility
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
CPU Power Delivery
DCDC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuorrteen1t)RqJA
TA = 25°C
TA = 100°C
VDSS
VGS
ID
30
±20
17.8
12.6
V
V
A
Power
Dissipation
(Note 1)
RqJA
TA = 25°C
PD
2.6 W
Continuous Drain
C(Nuorrteen2t)RqJA
Power
Dissipation
(Note 2)
RqJA
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
ID
PD
13.0 A
9.2
1.39 W
Continuous Drain
C(Nuorrteen1t)RqJC
TC = 25°C
TC = 100°C
ID
68 A
48
Power
Dissipation
(Note 1)
RqJC
TC = 25°C
PD
38.5 W
Pulsed Drain
Current
tp=10ms TA = 25°C
IDM
248 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
IDmaxPkg
TJ,
TSTG
IS
dV/dt
76
55 to
+175
35
6.0
A
°C
A
V/ns
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 28 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
TL
39 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
4.7 mW @ 10 V
10 mW @ 4.5 V
D
ID MAX
68 A
G
S
NCHANNEL MOSFET
4
4
4
12
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1 23
1 23
CASE 369AC CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y = Year
WW = Work Week
4965N = Device Code
G = PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
www.Dat©aSSheemeitc4oUnd.uncetotr Components Industries, LLC, 2011
April, 2011 Rev. 1
1
Publication Order Number:
NTD4965N/D





 NTD4965N
NTD4965N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
JunctiontoCase (Drain)
JunctiontoTAB (Drain)
JunctiontoAmbient – Steady State (Note 3)
JunctiontoAmbient – Steady State (Note 4)
3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
4. Surfacemounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJCTAB
RqJA
RqJA
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 5)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
DraintoSource On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 10 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 1.5 V, ID = 30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS (Note 6)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V, ID = 30 A
VGS = 10 V, VDS = 15 V, ID = 30 A
TurnOn Delay Time
td(ON)
Rise Time
TurnOff Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
Min
30
1.5
Value
3.9
4.3
57.6
107.6
Unit
°C/W
Typ Max Unit
V
21.5 mV/°C
1.0
10
±100
mA
nA
1.8 2.5
V
4.1 mV/°C
3.4 4.7
3.4
5.4 10 mW
5.3
52 S
1710
664
340
17.2
2.7
5.1
8.5
28.2
pF
nC
nC
12.1
34.2
18.9 ns
14.2
http://onsemi.com
2





 NTD4965N
NTD4965N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
8.3
21.5
24.4
7.8
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 30 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
0.86 1.1
0.74
28.3
13.3
15
16
Source Inductance (Note 7)
LS
Drain Inductance, DPAK
LD
Drain Inductance, IPAK (Note 7)
LD
TA = 25°C
Gate Inductance (Note 7)
LG
Gate Resistance
RG
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
2.85
0.0164
1.88
4.9
1.0
2.2
Unit
ns
V
ns
nC
nH
W
ORDERING INFORMATION
Device
Package
Shipping
NTD4965NT4G
DPAK
(PbFree)
2500 / Tape & Reel
NTD4965N1G
IPAK
(PbFree)
75 Units / Rail
NTD4965N35G
IPAK Trimmed Lead
(PbFree)
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
3



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