NTD4970N

NTD4970N Power MOSFET Features 30 V, 36 A, Single N−Channel, DPAK/IPAK Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 11 mW @ 10 V 21 mW @ 4.5 V D ID MAX 36 A Applications CPU Power Delivery DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 100°C TA = 25°C TA = 25°C TA = 100°C TA = 25°C TC = 25°C TC = 100°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 11.6 8.2 2.55 8.5 6.0 1.38 36 25 24.6 130 38 −55 to +175 22 6.0 11 W A A °C A mJ YWW 49 70NG V/ns 4 Drain W A W A 1 2 4 Unit V V A G S N−CHANNEL MOSFET 4 4 3 1 CASE 369AA DPAK (Bent Lead) STYLE 2 2 3 CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) 2 3 1 Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 49 70NG 4 D...