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Power MOSFET. NTD4970N Datasheet

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Power MOSFET. NTD4970N Datasheet






NTD4970N MOSFET. Datasheet pdf. Equivalent




NTD4970N MOSFET. Datasheet pdf. Equivalent





Part

NTD4970N

Description

Power MOSFET

Manufacture

ON Semiconductor

Datasheet
Download NTD4970N Datasheet


ON Semiconductor NTD4970N

NTD4970N; NTD4970N Power MOSFET Features 30 V, 36 A, Single N−Channel, DPAK/IPAK • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Mi nimize Driver Losses Optimized Gate Cha rge to Minimize Switching Losses Three Package Variations for Design Flexibili ty These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS 30 V .


ON Semiconductor NTD4970N

RDS(ON) MAX 11 mW @ 10 V 21 mW @ 4.5 V D ID MAX 36 A Applications • CPU Pow er Delivery • DC−DC Converters MAXI MUM RATINGS (TJ = 25°C unless otherwis e stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Con tinuous Drain Current RqJA (Note 1) Pow er Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Diss ipation RqJA (Note 2) Continuous .


ON Semiconductor NTD4970N

Drain Current RqJC (Note 1) Power Dissip ation RqJC (Note 1) Pulsed Drain Curren t tp=10ms Steady State TA = 25°C TA = 100°C TA = 25°C TA = 25°C TA = 100° C TA = 25°C TC = 25°C TC = 100°C TC = 25°C TA = 25°C TA = 25°C PD IDM ID maxPkg TJ, TSTG IS dV/dt EAS PD ID PD I D Symbol VDSS VGS ID Value 30 ±20 11.6 8.2 2.55 8.5 6.0 1.38 36 25 24.6 130 3 8 −55 to +175 22 6.0 11 W A A .



Part

NTD4970N

Description

Power MOSFET

Manufacture

ON Semiconductor

Datasheet
Download NTD4970N Datasheet




 NTD4970N
NTD4970N
Power MOSFET
30 V, 36 A, Single NChannel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Three Package Variations for Design Flexibility
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
CPU Power Delivery
DCDC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 100°C
VDSS
VGS
ID
30
±20
11.6
8.2
V
V
A
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
Steady
State
TA = 25°C
TA = 25°C
TA = 100°C
TA = 25°C
TC = 25°C
TC = 100°C
PD
ID
PD
ID
2.55 W
8.5 A
6.0
1.38 W
36 A
25
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
24.6 W
Pulsed Drain
Current
tp=10ms TA = 25°C
IDM
130 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 15 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDmaxPkg
TJ,
TSTG
IS
dV/dt
EAS
38
55 to
+175
22
6.0
11
A
°C
A
V/ns
mJ
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
11 mW @ 10 V
21 mW @ 4.5 V
D
ID MAX
36 A
G
S
NCHANNEL MOSFET
4
4
4
12
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1 23
1 23
CASE 369AC CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y = Year
WW = Work Week
4970N = Device Code
G = PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
www.Dat©aSSheemeitc4oUnd.uncetotr Components Industries, LLC, 2011
June, 2011 Rev. 0
1
Publication Order Number:
NTD4970N/D





 NTD4970N
NTD4970N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
JunctiontoCase (Drain)
JunctiontoTAB (Drain)
JunctiontoAmbient – Steady State (Note 3)
JunctiontoAmbient – Steady State (Note 4)
3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
4. Surfacemounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJCTAB
RqJA
RqJA
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 5)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
DraintoSource On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 10 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 1.5 V, ID = 30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS (Note 6)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V, ID = 30 A
VGS = 10 V, VDS = 15 V, ID = 30 A
TurnOn Delay Time
td(ON)
Rise Time
TurnOff Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
Min
30
1.5
Value
6.1
4.3
58.9
108.9
Unit
°C/W
Typ Max Unit
V
17 mV/°C
1.0
10
±100
mA
nA
1.9
4.5
8.3
8.2
14.6
13.2
34
2.5 V
mV/°C
11
21 mW
S
774
306 pF
161
8.2
1.5
nC
3.0
4.0
15.8 nC
10
27.6
12.5 ns
5.7
http://onsemi.com
2





 NTD4970N
NTD4970N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
6.3
19.5
16.2
3.7
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 30 A
TJ = 25°C
TJ = 125°C
VGS
=
0
V, dIS/dt
IS = 30
=
A
100
A/ms,
0.97 1.1
0.88
19.6
10.2
9.4
7.0
Source Inductance (Note 7)
LS
Drain Inductance, DPAK
LD
Drain Inductance, IPAK (Note 7)
LD
TA = 25°C
Gate Inductance (Note 7)
LG
Gate Resistance
RG
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
2.85
0.0164
1.88
4.9
0.8
2.2
Unit
ns
V
ns
nC
nH
W
ORDERING INFORMATION
Device
Package
Shipping
NTD4970NT4G
DPAK
(PbFree)
2500 / Tape & Reel
NTD4970N1G
IPAK
(PbFree)
75 Units / Rail
NTD4970N35G
IPAK Trimmed Lead
(PbFree)
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
3



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