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Power MOSFET. NTMD5838NL Datasheet

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Power MOSFET. NTMD5838NL Datasheet






NTMD5838NL MOSFET. Datasheet pdf. Equivalent




NTMD5838NL MOSFET. Datasheet pdf. Equivalent





Part

NTMD5838NL

Description

Power MOSFET

Manufacture

ON Semiconductor

Datasheet
Download NTMD5838NL Datasheet


ON Semiconductor NTMD5838NL

NTMD5838NL; NTMD5838NL Power MOSFET Features 40 V, 8.9 A, 25 mW, Dual N−Channel SO−8 • • • Low RDS(on) Low Capacita nce Optimized Gate Charge These Devices are Pb−Free, Halogen Free/BFR Free a nd are RoHS Compliant MAXIMUM RATINGS ( TJ = 25°C unless otherwise stated) Par ameter Drain−to−Source Voltage Gate −to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation .


ON Semiconductor NTMD5838NL

RqJA (Note 1) Continuous Drain Current R qJA (Note 1) Power Dissipation RqJA (No te 1) Pulsed Drain Current TA = 25°C S teady State TA = 70°C TA = 25°C TA = 70°C TA = 25°C t ≤10 s TA = 70°C T A = 25°C TA = 70°C tp = 10 ms IDM TJ, TSTG IS EAS IAS TL PD ID PD Symbol VDS S VGS ID Value 40 ±20 7.4 5.9 2.1 1.3 8.9 7.1 3.0 1.9 35 −55 to +150 7.0 20 21 260 A °C A mJ A °C A Y WW G.


ON Semiconductor NTMD5838NL

W A S S W G G Unit V V A N−CHANNEL MO SFET D D http://onsemi.com V(BR)DSS 4 0 V RDS(ON) MAX 25 mW @ 10 V 30.8 mW @ 4.5 V ID MAX 8.9 A MARKING DIAGRAM/ PIN ASSIGNMENT D1 D1 D2 D2 8 SO−8 CAS E 751 STYLE 11 D5838N AYWW G Operating Junction and Storage Temperature Sourc e Current (Body Diode) Single Pulse Dra in−to−Source Avalanche Energy (L = 0.1 mH) Lead Temperature f.



Part

NTMD5838NL

Description

Power MOSFET

Manufacture

ON Semiconductor

Datasheet
Download NTMD5838NL Datasheet




 NTMD5838NL
NTMD5838NL
Power MOSFET
40 V, 8.9 A, 25 mW, Dual NChannel SO8
Features
Low RDS(on)
Low Capacitance
Optimized Gate Charge
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJA
Power Dissipation
RqJA (Note 1)
Pulsed Drain
Current
TA = 25°C
Steady
State
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
t 10 s
TA = 70°C
TA = 25°C
TA = 70°C
tp = 10 ms
VDSS
VGS
ID
PD
ID
PD
IDM
40
±20
7.4
5.9
2.1
1.3
8.9
7.1
3.0
1.9
35
Unit
V
V
A
W
A
W
A
Operating Junction and Storage
Temperature
TJ, TSTG 55 to
+150
°C
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche
Energy (L = 0.1 mH)
IS
EAS
IAS
7.0 A
20 mJ
21 A
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoAmbient Steady State
(Notes 1 & 3)
RqJA
58
JunctiontoAmbient t 10 s (Note 1)
RqJA
40 °C/W
JunctiontoAmbient Steady State (Note 2)
RqJA
106
1. Surfacemounted on FR4 board using 1 sqin pad
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surfacemounted on FR4 board using 0.155 in sq (100mm2) pad size.
3. Both channels receive equivalent power dissipation
1 W applied on each channel: TJ = 2 W * 58°C/W + 25°C = 141°C
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V(BR)DSS
40 V
RDS(ON) MAX
25 mW @ 10 V
30.8 mW @ 4.5 V
ID MAX
8.9 A
NCHANNEL MOSFET
DD
GG
SS
MARKING DIAGRAM/
PIN ASSIGNMENT
D1 D1 D2 D2
8
SO8
CASE 751
STYLE 11
D5838N
AYWW
G
1
S1 G1 S2 G2
(Top View)
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMD5838NLR2G SO8 2500/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
www.Dat©aSSheemeitc4oUnd.uncetotr Components Industries, LLC, 2011
April, 2011 Rev. 0
1
Publication Order Number:
NTMD5838NL/D





 NTMD5838NL
NTMD5838NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 4)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 40 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 7 A
VGS = 4.5 V, ID = 7 A
VDS = 15 V, ID = 7 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
CISS
COSS
CRSS
QG(TOT)
VGS = 0 V, f = 1 MHz, VDS = 20 V
VGS = 10 V, VDS = 20 V; ID = 7 A
Min
40
1.0
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Plateau Voltage
Gate Resistance
SWITCHING CHARACTERISTICS (Note 5)
QG(TH)
QGS
QGD
VGP
RG
VGS = 4.5 V, VDS = 20 V; ID = 7 A
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 20 V,
ID = 7 A, RG = 2.5 W
Forward Diode Voltage
VSD
VIGSS==70AV,
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = 7 A
Reverse Recovery Charge
QRR
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
Typ Max Unit
V
32 mV/°C
1.0
100
±100
mA
nA
1.8 3.0
V
6.0 mV/°C
20.5 25
25.0 30.8
mW
4.0 S
785
123
90
17
8.6 11
0.8
2.8
4.0
3.2
1.8
pF
nC
V
W
11
23
17 ns
4.0
0.84 1.2
0.7
17
11
6.0
10
V
ns
nC
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2





 NTMD5838NL
NTMD5838NL
TYPICAL PERFORMANCE CURVES
50
10 V
40
30
5.5 V
7.5 V
4.4 V TJ = 25°C
4V
50
VDS 5 V
40
30
20 3.6 V
10
3V
0
01234
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
0.06
0.05
TJ = 25°C
ID = 7 A
0.04
20
TJ = 125°C
10 TJ = 25°C
TJ = 55°C
0
52 3 4
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.035
TJ = 25°C
0.025
VGS = 4.5 V
0.03
0.02
0.015
VGS = 10 V
5
0.01
2 3 4 5 6 7 8 9 10
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. OnResistance vs. GatetoSource
Voltage
0.005
2 6 10 14 18
ID, DRAIN CURRENT (A)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
1.6
VGS = 4.5 V
1.4 ID = 7 A
1.2
100000
VGS = 0 V
10000
TJ = 150°C
1
1000
TJ = 125°C
0.8
0.6
50
25 0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
150
100
5
15 25 35
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DraintoSource Leakage Current
vs. Voltage
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3



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