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Power MOSFET. NTMD5836NL Datasheet

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Power MOSFET. NTMD5836NL Datasheet






NTMD5836NL MOSFET. Datasheet pdf. Equivalent




NTMD5836NL MOSFET. Datasheet pdf. Equivalent





Part

NTMD5836NL

Description

Power MOSFET



Feature


NTMD5836NL Power MOSFET 40 V, Dual N−C hannel, SOIC−8 Features • • • • • Asymmetrical N Channels Low RD S(on) Low Capacitance Optimized Gate Ch arge These Devices are Pb−Free, Halog en Free/BFR Free and are RoHS Compliant ID Max (Notes 1 and 2) 11 A G1 http:/ /onsemi.com N−Channel 1 D1 N−Chan nel 2 D2 V(BR)DSS Channel 1 40 V RDS( on) Max 12 mW @ 10 V 16 mW @ 4.5 V G2.
Manufacture

ON Semiconductor

Datasheet
Download NTMD5836NL Datasheet


ON Semiconductor NTMD5836NL

NTMD5836NL; S1 S2 Channel 2 40 V 25 mW @ 10 V 30 .8 mW @ 4.5 V 6.5 A 1. Surface−moun ted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] includin g traces) 2. Only selected channel is b een powered 1W applied on channel 1: TJ = 1 W * 85°C/W + 25°C = 110°C MARK ING DIAGRAM* AND PIN ASSIGNMENT 8 1 SOI C−8 CASE 751 D1 D1 D2 D2 8 5836NL AYW W G G 1 S1 G1 S2 G2 A Y W.


ON Semiconductor NTMD5836NL

W G = Assembly Location = Year = Work We ek = Pb−Free Package (Note: Microdot may be in either location) ORDERING I NFORMATION Device NTMD5836NLR2G Package SOIC−8 (Pb−Free) Shipping† 2500 / Tape & Reel †For information on ta pe and reel specifications, including p art orientation and tape sizes, please refer to our Tape and Reel Packaging Sp ecifications Brochure, BRD80.


ON Semiconductor NTMD5836NL

11/D © Semiconductor Components Indust ries, LLC, 2011 www.DataSheet4U.net Mar ch, 2011 − Rev. 0 1 Publication Ord er Number: NTMD5836NL/D NTMD5836NL MAX IMUM RATINGS (TJ = 25°C unless otherwi se stated) Parameter Drain−to−Sourc e Voltage Gate−to−Source Voltage Co ntinuous Drain Current RθJA (Notes 3 a nd 4) Power Dissipation RθJA (Notes 3 and 4) Continuous Drain Current .

Part

NTMD5836NL

Description

Power MOSFET



Feature


NTMD5836NL Power MOSFET 40 V, Dual N−C hannel, SOIC−8 Features • • • • • Asymmetrical N Channels Low RD S(on) Low Capacitance Optimized Gate Ch arge These Devices are Pb−Free, Halog en Free/BFR Free and are RoHS Compliant ID Max (Notes 1 and 2) 11 A G1 http:/ /onsemi.com N−Channel 1 D1 N−Chan nel 2 D2 V(BR)DSS Channel 1 40 V RDS( on) Max 12 mW @ 10 V 16 mW @ 4.5 V G2.
Manufacture

ON Semiconductor

Datasheet
Download NTMD5836NL Datasheet




 NTMD5836NL
NTMD5836NL
Power MOSFET
40 V, Dual NChannel, SOIC8
Features
Asymmetrical N Channels
Low RDS(on)
Low Capacitance
Optimized Gate Charge
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
V(BR)DSS
RDS(on) Max
ID Max
(Notes 1 and 2)
Channel 1
40 V
12 mW @ 10 V
11 A
16 mW @ 4.5 V
Channel 2
40 V
25 mW @ 10 V
6.5 A
30.8 mW @ 4.5 V
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [2 oz] including traces)
2. Only selected channel is been powered
1W applied on channel 1: TJ = 1 W * 85°C/W + 25°C = 110°C
http://onsemi.com
NChannel 1
D1
NChannel 2
D2
G1 G2
S1 S2
8
1
SOIC8
CASE 751
MARKING DIAGRAM*
AND PIN ASSIGNMENT
D1 D1 D2 D2
8
5836NL
AYWW G
G
1
S1 G1 S2 G2
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
NTMD5836NLR2G SOIC8
(PbFree)
Shipping
2500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
www.Dat©aSSheemeitc4oUnd.uncetotr Components Industries, LLC, 2011
March, 2011 Rev. 0
1
Publication Order Number:
NTMD5836NL/D




 NTMD5836NL
NTMD5836NL
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Ch 1
Ch 2
Unit
DraintoSource Voltage
VDSS
40
40
V
GatetoSource Voltage
VGS
$20
$20
V
Continuous Drain Current RθJA (Notes 3 and 4)
Steady
State
TA = 25°C
TA = 70°C
ID
9.0 5.7 A
7.2 4.6
Power Dissipation RθJA (Notes 3 and 4)
TA = 25°C
PD
1.5 1.5 W
TA = 70°C
0.9 0.9
Continuous Drain Current RθJA (Notes 3 and 4)
t v 10s TA = 25°C
ID
11 6.5 A
TA = 70°C
8.6 4.6
Power Dissipation RθJA (Notes 3 and 4)
TA = 25°C
PD
2.1 1.9 W
TA = 70°C
1.3 1.2
Pulsed Drain Current
tp = 10 ms
IDM 43 26 A
Operating Junction and Storage Temperature
TJ, TSTG
55 to +150
°C
Source Current (Body Diode)
IS 10 7.0 A
Single Pulse DraintoSource Avalanche Energy (VDD = 40 V, VGS = 10 V, L = 0.1 mH)
EAS
76
22 mJ
IAS 39 21 A
Lead Temperature for Soldering Purposes (1/8” from case for 10s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
3. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
4. Only selected channel is been powered
1W applied on channel 1: TJ = 1 W * 85°C/W + 25°C = 110°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
JunctiontoAmbient Steady State (Notes 5 and 7)
RθJA
JunctiontoAmbient – t v 10 s (Notes 5 and 7)
RθJA
JunctiontoAmbient Steady State (Notes 5 and 8)
RθJA
JunctiontoAmbient Steady State (Notes 6 and 7)
RθJA
5. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
6. Surfacemounted on FR4 board using 0.155 in sq (100 mm2) pad size
7. Only selected channel is been powered
1W applied on channel 1: TJ = 1 W * 85°C/W + 25°C = 110°C
8. Both channels receive equivalent power dissipation
1 W applied on each channel: TJ = 2 W * 59°C/W + 25°C = 143°C
Ch 1
Ch 2
85 86
60 65
59
136 136
Unit
°C/W
http://onsemi.com
2




 NTMD5836NL
NTMD5836NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown
Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
DraintoSource Breakdown
Voltage Temperature Coefficient
V(BR)DSS
/ TJ
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 40 V
TJ = 25°C
TJ = 125°C
GatetoSource Leakage Current
IGSS
VDS = 0 V, VGS = $20 V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
Negative Threshold Temperature
Coefficient
VGST(JTH) /
DraintoSource On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
VGS = 10 V, ID = 10 A
VGS = 10 V, ID = 7 A
VGS = 4.5 V, ID = 10 A
VGS = 4.5 V, ID = 7 A
VDS = 15 V, ID = 10 A
VDS = 15 V, ID = 7 A
Output Capacitance
Reverse Transfer Capacitance
COSS
CRSS
VGS = 0 V, f = 1 MHz, VDS =
20 V
9. Pulse Test: pulse width v 300 ms, duty cycle v 2%
10. Switching characteristics are independent of operating junction temperatures
Ch
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Ch 1
Ch 2
Min
40
1.0
1.0
Typ Max Unit
V
146 mV/
25 °C
1.0 mA
100
$100
nA
1.8 3.0
V
1.8 3.0
6.0 mV/°C
6.0
9.5 12 mW
20.5 25
13 16 mW
25.0 30.8
10.5 S
6.0
2120
730
315
123
225
84
pF
http://onsemi.com
3






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