Power MOSFET
NTMD5836NL Power MOSFET
40 V, Dual N−Channel, SOIC−8
Features
• • • • •
Asymmetrical N Channels Low RDS(on) Low Capaci...
Description
NTMD5836NL Power MOSFET
40 V, Dual N−Channel, SOIC−8
Features
Asymmetrical N Channels Low RDS(on) Low Capacitance Optimized Gate Charge These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
ID Max (Notes 1 and 2) 11 A G1
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N−Channel 1 D1
N−Channel 2 D2
V(BR)DSS Channel 1 40 V
RDS(on) Max 12 mW @ 10 V 16 mW @ 4.5 V
G2 S1 S2
Channel 2
40 V
25 mW @ 10 V 30.8 mW @ 4.5 V
6.5 A
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 2. Only selected channel is been powered 1W applied on channel 1: TJ = 1 W * 85°C/W + 25°C = 110°C
MARKING DIAGRAM* AND PIN ASSIGNMENT
8 1 SOIC−8 CASE 751 D1 D1 D2 D2 8 5836NL AYWW G G 1 S1 G1 S2 G2 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device NTMD5836NLR2G Package SOIC−8 (Pb−Free) Shipping† 2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D
© Semiconductor Components Industries, LLC, 2011 www.DataSheet4U.net March, 2011 − Rev. 0
1
Publication Order Number: NTMD5836NL/D
NTMD5836NL
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RθJA (Notes 3 and 4) Power Dissipation RθJA (Notes 3 and 4) Continuous Drain Current RθJA (Notes 3 and 4)...
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