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CAL-DIODE. SKCD31C120I4F Datasheet

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CAL-DIODE. SKCD31C120I4F Datasheet






SKCD31C120I4F CAL-DIODE. Datasheet pdf. Equivalent




SKCD31C120I4F CAL-DIODE. Datasheet pdf. Equivalent





Part

SKCD31C120I4F

Description

CAL-DIODE

Manufacture

Semikron International

Datasheet
Download SKCD31C120I4F Datasheet


Semikron International SKCD31C120I4F

SKCD31C120I4F; SKCD 31 C 120 I4F Absolute Maximum Ratin gs Symbol VRRM IF(AV) IFSM Tjmax Condi tions Tj = 25 °C, IR = 0.06 mA Tc = 80 °C, Tj = 175 °C, Fi=PI/2 10 ms sin 1 80° Tj = 25 °C Tj = 150 °C Values 1 200 31 270 270 175 Unit V A A A °C C AL-DIODE IF = 50 A VRRM = 1200 V Size: 5,60 mm x 5,60 mm Electrical Character istics Symbol i²t IR VF Conditions Tj = 150 °C, sin 180°, 10 ms.


Semikron International SKCD31C120I4F

Tj = 25 °C, VRRM = 1200 V Tj = 150 °C , VRRM = 1200 V Tj = 25 °C, IF = 50 A Tj = 150 °C, IF = 50 A Tj = 175 °C, I F = 50 A min. typ. max. 365 0.06 Un it A²s mA mA V V V V m V m 4.40 2.22 2.18 2.03 0.90 25.6 0.82 24.20 8 .80 2.54 2.50 2.34 1.10 27.90 0.98 27.3 0 SKCD 31 C 120 I4F Features • • • max. junction 175 °C very low f orward voltage drop positive temperat.


Semikron International SKCD31C120I4F

ure coefficient extreme soft recovery V (TO) rT V(TO) rT Tj = 150 °C Tj = 150 °C Tj = 175 °C Tj = 175 °C Dynamic Characteristics Symbol trr Err Irrm C onditions Tj = 150 °C, 50 A, 600 V, 10 00 A/µs Tj = 150 °C, 50 A, 600 V, 100 0 A/µs Tj = 150 °C, 50 A, 600 V, 1000 A/µs min. typ. 0.53 2.6 46 max. U nit µs mJ A Typical Applications* • freewheeling diode for IGBT T.



Part

SKCD31C120I4F

Description

CAL-DIODE

Manufacture

Semikron International

Datasheet
Download SKCD31C120I4F Datasheet




 SKCD31C120I4F
SKCD 31 C 120 I4F
CAL-DIODE
IF = 50 A
VRRM = 1200 V
Size: 5,60 mm x 5,60 mm
SKCD 31 C 120 I4F
Features
• max. junction 175 °C
• very low forward voltage drop
• positive temperature coefficient
• extreme soft recovery
Typical Applications*
• freewheeling diode for IGBT
Absolute Maximum Ratings
Symbol Conditions
VRRM
IF(AV)
IFSM
Tjmax
Tj = 25 °C, IR = 0.06 mA
Tc = 80 °C, Tj = 175 °C, Fi=PI/2
10 ms
Tj = 25 °C
sin 180°
Tj = 150 °C
Electrical Characteristics
Symbol Conditions
i²t
IR
VF
V(TO)
rT
V(TO)
rT
Tj = 150 °C, sin 180°, 10 ms
Tj = 25 °C, VRRM = 1200 V
Tj = 150 °C, VRRM = 1200 V
Tj = 25 °C, IF = 50 A
Tj = 150 °C, IF = 50 A
Tj = 175 °C, IF = 50 A
Tj = 150 °C
Tj = 150 °C
Tj = 175 °C
Tj = 175 °C
Dynamic Characteristics
Symbol Conditions
trr Tj = 150 °C, 50 A, 600 V, 1000 A/µs
Err Tj = 150 °C, 50 A, 600 V, 1000 A/µs
Irrm Tj = 150 °C, 50 A, 600 V, 1000 A/µs
Thermal Characteristics
Symbol Conditions
Tj
Tstg
Tsolder
Tsolder
Rth(j-c)
10 min.
5 min.
Semitrans Assembly
Mechanical Characteristics
Symbol Conditions
Raster
size
Area total
Anode Metallization
Cathode Metallization
Wire bond
Package
Chips /
Package
Values
1200
31
270
270
175
Unit
V
A
A
A
°C
min.
typ.
4.40
2.22
2.18
2.03
0.90
25.6
0.82
24.20
max. Unit
365
0.06
8.80
2.54
2.50
2.34
1.10
27.90
0.98
27.30
A²s
mA
mA
V
V
V
V
m
V
m
min. typ. max. Unit
0.53 µs
2.6 mJ
46 A
min. typ. max. Unit
-40 175 °C
-40 175 °C
250 °C
320 °C
1.00 K/W
Values
Unit
5.60 x 5.60
31
bondable (Al)
solderable (Ag/Ni)
Al, typ. diameter = 300 µm
wafer frame
470
mm2
mm²
pcs
SKCD
ww©w.DbaytaSShEeMet4IKU.RneOt N
Rev. 0 – 16.03.2011
1





 SKCD31C120I4F
SKCD 31 C 120 I4F
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
2
Rev. 0 – 16.03.2011
© by SEMIKRON








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