SKCD31C120I4F

SKCD 31 C 120 I4F Absolute Maximum Ratings Symbol VRRM IF(AV) IFSM Tjmax Conditions Tj = 25 °C, IR = 0.06 mA Tc = 80 °C, Tj = 175 °C, Fi=PI/2 10 ms sin 180° Tj = 25 °C Tj = 150 °C Values 1200 31 270 270 175 Unit V A A A °C CAL-DIODE IF = 50 A VRRM = 1200 V Size: 5,60 mm x 5,60 mm Electrical Characteristics Symbol i²t IR VF Conditions Tj = 150 °C, sin 180°, 10 ms Tj = 25 °C, VRRM = 1200 V Tj = 150 °C, VRRM = 1200 V Tj = 25 °C, IF = 50 A Tj = 150 °C, IF = 50 A Tj = 175 °C, IF = 50 A min. typ. max. 365 0.06 Unit A²s mA mA V V V V m V m 4.40 2.22 2.18 2.03 0.90 25.6 0.82 24.20 8.80 2.54 2.50 2.34 1.10 27.90 0.98 27.30 SKCD 31 C 120 I4F Features max. junction 175 °C very low forward voltage drop positive temperature coefficient extreme soft recovery V(TO) rT V(TO) rT Tj = 150 °C Tj = 150 °C Tj = 175 °C Tj = 175 °C Dynamic Characteristics Symbol trr Err Irrm Conditions Tj = 150 °C, 50 A, 600 V, 1000 A/µs Tj = 150 °C, 50 A, 600 V, 1000 A/µs Tj = 150 °C, 50 A, 600 V, 1000 A/µs min. typ. 0.53 2.6 46 max. Unit µs mJ A Typical Applications* freewheeling diode for IGBT Thermal Characteristics Symbol Tj Tstg Tsolder Tsolder Rth(j-c) 10 min. 5 min. Semitrans Assembly 1.00 Conditions min. -40 -40 typ. max. 175 175 250 320 Unit °C °C °C °C K/W Mechanical Characteristics Symbol Raster size Area total Anode Cathode Wire bond Package Chips / Package Metallization Metallization Conditions Values 5.60 x 5.60 31 bondable (Al) solderable (Ag/Ni) Al, typ. d...