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CAL-DIODE. SKCD47C120I3 Datasheet

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CAL-DIODE. SKCD47C120I3 Datasheet






SKCD47C120I3 CAL-DIODE. Datasheet pdf. Equivalent




SKCD47C120I3 CAL-DIODE. Datasheet pdf. Equivalent





Part

SKCD47C120I3

Description

CAL-DIODE



Feature


SKCD 47 C 120 I3 Absolute Maximum Rating s Symbol VRRM IF(AV) IFSM Tjmax Condit ions Tj = 25 °C, IR = 0.2 mA Ts = 80 C, Tj = 150 °C 10 ms sin 180° Tj = 2 5 °C Tj = 150 °C Values 1200 40 720 550 150 Unit V A A A °C CAL-DIODE IF = 55 A VRRM = 1200 V Size: 6,86 mm x 6 ,86 mm SKCD 47 C 120 I3 Electrical Cha racteristics Symbol i2t IR VF V(TO) rT Conditions Tj = 150 °C, .
Manufacture

Semikron International

Datasheet
Download SKCD47C120I3 Datasheet


Semikron International SKCD47C120I3

SKCD47C120I3; 10 ms, sin 180° Tj = 25 °C, VRRM = 120 0 V Tj = 125 °C, VRRM = 1200 V Tj = 25 °C, IF = 55 A Tj = 125 °C, IF = 55 A Tj = 125 °C Tj = 125 °C min. typ. max. 1513 0.20 4.00 Unit A2s mA mA V V V mΩ 2.00 1.79 1.18 10.9 2.50 2.3 0 Features • low forward voltage dro p combined with a low temperature depen dence • easy paralleling due to a sma ll forward voltage spread • ver.


Semikron International SKCD47C120I3

y soft recovery behavior • small switc hing losses • high ruggedness • com patible to thick wire bonding • compa tible to all standard solder processes Dynamic Characteristics Symbol trr trr Qrr Qrr Irrm Irrm Conditions Tj = 25 °C, 50 A, 600 V, 800 A/µs Tj = 125 ° C, 50 A, 600 V, 800 A/µs Tj = 25 °C, 50 A, 600 V, 800 A/µs Tj = 125 °C, 50 A, 600 V, 800 A/µs Tj = 25 °C, 5.


Semikron International SKCD47C120I3

0 A, 600 V, 800 A/µs Tj = 125 °C, 50 A , 600 V, 800 A/µs min. typ. max. U nit µs ns 3 8 40 µC µC A A Typica l Applications* • freewheeling diode for IGBT • particularly suitable for frequencies > 8 kHz Thermal Characteri stics Symbol Tj Tstg Tsolder Tsolder Rt h(j-s) 10 min. 5 min. sold. on 0,38 mm DCB, reference point on copper heatsink close to the chip 0.7 Cond.

Part

SKCD47C120I3

Description

CAL-DIODE



Feature


SKCD 47 C 120 I3 Absolute Maximum Rating s Symbol VRRM IF(AV) IFSM Tjmax Condit ions Tj = 25 °C, IR = 0.2 mA Ts = 80 C, Tj = 150 °C 10 ms sin 180° Tj = 2 5 °C Tj = 150 °C Values 1200 40 720 550 150 Unit V A A A °C CAL-DIODE IF = 55 A VRRM = 1200 V Size: 6,86 mm x 6 ,86 mm SKCD 47 C 120 I3 Electrical Cha racteristics Symbol i2t IR VF V(TO) rT Conditions Tj = 150 °C, .
Manufacture

Semikron International

Datasheet
Download SKCD47C120I3 Datasheet




 SKCD47C120I3
SKCD 47 C 120 I3
CAL-DIODE
IF = 55 A
VRRM = 1200 V
Size: 6,86 mm x 6,86 mm
SKCD 47 C 120 I3
Features
• low forward voltage drop combined
with a low temperature dependence
• easy paralleling due to a small forward
voltage spread
• very soft recovery behavior
• small switching losses
• high ruggedness
• compatible to thick wire bonding
• compatible to all standard solder
processes
Typical Applications*
• freewheeling diode for IGBT
• particularly suitable for frequencies > 8
kHz
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
VRRM
IF(AV)
IFSM
Tjmax
Tj = 25 °C, IR = 0.2 mA
Ts = 80 °C, Tj = 150 °C
10 ms
Tj = 25 °C
sin 180°
Tj = 150 °C
Electrical Characteristics
Symbol Conditions
1200
40
720
550
150
V
A
A
A
°C
min. typ. max. Unit
i2t
IR
VF
V(TO)
rT
Tj = 150 °C, 10 ms, sin 180°
Tj = 25 °C, VRRM = 1200 V
Tj = 125 °C, VRRM = 1200 V
Tj = 25 °C, IF = 55 A
Tj = 125 °C, IF = 55 A
Tj = 125 °C
Tj = 125 °C
1513 A2s
0.20 mA
4.00 mA
2.00 2.50 V
1.79 2.30 V
1.18 V
10.9 m
Dynamic Characteristics
Symbol Conditions
min. typ. max. Unit
trr Tj = 25 °C, 50 A, 600 V, 800 A/µs
trr Tj = 125 °C, 50 A, 600 V, 800 A/µs
Qrr Tj = 25 °C, 50 A, 600 V, 800 A/µs
Qrr Tj = 125 °C, 50 A, 600 V, 800 A/µs
Irrm Tj = 25 °C, 50 A, 600 V, 800 A/µs
Irrm Tj = 125 °C, 50 A, 600 V, 800 A/µs
µs
ns
3 µC
8 µC
A
40 A
Thermal Characteristics
Symbol Conditions
min. typ. max. Unit
Tj -40 150 °C
Tstg -40 150 °C
Tsolder
10 min.
250 °C
Tsolder
5 min.
320 °C
Rth(j-s)
sold. on 0,38 mm DCB, reference point
on copper heatsink close to the chip
0.7
K/W
Mechanical Characteristics
Symbol Conditions
Raster
size
Area total
Anode
Cathode
Wire bond
Package
Chips /
Package
Values
6.86 x 6.86
47.06
bondable (Al)
solderable (Ag/Ni)
Al, diameter 500 µm
wafer frame
208 (5" Wafer)
Unit
mm2
mm2
pcs
SKCD
ww©w.bDyataSSEheMetI4KUR.nOet N
Rev. 0 – 18.02.2010
1




 SKCD47C120I3
SKCD 47 C 120 I3
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
2
Rev. 0 – 18.02.2010
© by SEMIKRON










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