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CAL-DIODE. SKCD47C120IHD Datasheet

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CAL-DIODE. SKCD47C120IHD Datasheet






SKCD47C120IHD CAL-DIODE. Datasheet pdf. Equivalent




SKCD47C120IHD CAL-DIODE. Datasheet pdf. Equivalent





Part

SKCD47C120IHD

Description

CAL-DIODE

Manufacture

Semikron International

Datasheet
Download SKCD47C120IHD Datasheet


Semikron International SKCD47C120IHD

SKCD47C120IHD; SKCD 47 C 120 I HD Absolute Maximum Rati ngs Symbol VRRM IF(AV) IFSM Tjmax Cond itions Tj = 25 °C, IR = 0.2 mA Ts = 80 °C, Tj = 150 °C 10 ms sin 180° Tj = 25 °C Tj = 150 °C Values 1200 50 79 0 640 150 Unit V A A A °C CAL-DIODE IF = 85 A VRRM = 1200 V Size: 6,86 mm x 6,86 mm SKCD 47 C 120 I HD Electrical Characteristics Symbol i2t IR VF V(TO) rT Conditions Tj = 150 .


Semikron International SKCD47C120IHD

°C, 10 ms, sin 180° Tj = 25 °C, VRRM = 1200 V Tj = 125 °C, VRRM = 1200 V Tj = 25 °C, IF = 70 A Tj = 125 °C, IF = 70 A Tj = 125 °C Tj = 125 °C min. typ. max. 2048 0.20 Unit A2s mA mA V V V mΩ 1.50 1.50 0.92 8.3 1.77 1.77 Features • high current density • easy paralleling due to a small forwar d voltage spread • positive temperatu re coefficient • very soft recover.


Semikron International SKCD47C120IHD

y behavior • small switching losses high ruggedness • compatible to thi ck wire bonding • compatible to stand ard solder processes Dynamic Character istics Symbol trr trr Qrr Qrr Irrm Irrm Conditions Tj = 25 °C, 50 A, 600 V, 800 A/µs Tj = 125 °C, 50 A, 600 V, 80 0 A/µs Tj = 25 °C, 50 A, 600 V, 800 A /µs Tj = 125 °C, 50 A, 600 V, 800 A/ s Tj = 25 °C, 50 A, 600 V, 800 A/.



Part

SKCD47C120IHD

Description

CAL-DIODE

Manufacture

Semikron International

Datasheet
Download SKCD47C120IHD Datasheet




 SKCD47C120IHD
SKCD 47 C 120 I HD
CAL-DIODE
IF = 85 A
VRRM = 1200 V
Size: 6,86 mm x 6,86 mm
SKCD 47 C 120 I HD
Features
• high current density
• easy paralleling due to a small forward
voltage spread
• positive temperature coefficient
• very soft recovery behavior
• small switching losses
• high ruggedness
• compatible to thick wire bonding
• compatible to standard solder
processes
Typical Applications*
• freewheeling diode for IGBT
• particularly suitable for frequencies < 8
kHz
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
VRRM
IF(AV)
IFSM
Tjmax
Tj = 25 °C, IR = 0.2 mA
Ts = 80 °C, Tj = 150 °C
10 ms
Tj = 25 °C
sin 180°
Tj = 150 °C
Electrical Characteristics
Symbol Conditions
1200
50
790
640
150
V
A
A
A
°C
min. typ. max. Unit
i2t
IR
VF
V(TO)
rT
Tj = 150 °C, 10 ms, sin 180°
Tj = 25 °C, VRRM = 1200 V
Tj = 125 °C, VRRM = 1200 V
Tj = 25 °C, IF = 70 A
Tj = 125 °C, IF = 70 A
Tj = 125 °C
Tj = 125 °C
2048 A2s
0.20 mA
mA
1.50 1.77 V
1.50 1.77 V
0.92 V
8.3 m
Dynamic Characteristics
Symbol Conditions
min. typ. max. Unit
trr Tj = 25 °C, 50 A, 600 V, 800 A/µs
trr Tj = 125 °C, 50 A, 600 V, 800 A/µs
Qrr Tj = 25 °C, 50 A, 600 V, 800 A/µs
Qrr Tj = 125 °C, 50 A, 600 V, 800 A/µs
Irrm Tj = 25 °C, 50 A, 600 V, 800 A/µs
Irrm Tj = 125 °C, 50 A, 600 V, 800 A/µs
µs
ns
µC
12 µC
A
43 A
Thermal Characteristics
Symbol Conditions
min. typ. max. Unit
Tj -40 150 °C
Tstg -40 150 °C
Tsolder
10 min.
250 °C
Tsolder
5 min.
320 °C
Rth(j-s)
sold. on 0,38 mm DCB, reference point
on copper heatsink close to the chip
0.7
K/W
Mechanical Characteristics
Symbol Conditions
Raster
size
Area total
Anode
Cathode
Wire bond
Package
Chips /
Package
Values
6.86 x 6.86
47.06
bondable (Al)
solderable (Ag/Ni)
Al, diameter 500 µm
wafer frame
208 (5" Wafer)
Unit
mm2
mm2
pcs
SKCD
ww©w.bDyataSSEheMetI4KUR.nOet N
Rev. 0 – 18.02.2010
1





 SKCD47C120IHD
SKCD 47 C 120 I HD
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
2
Rev. 0 – 18.02.2010
© by SEMIKRON








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