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CAL-DIODE. SKCD47C170I Datasheet

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CAL-DIODE. SKCD47C170I Datasheet






SKCD47C170I CAL-DIODE. Datasheet pdf. Equivalent




SKCD47C170I CAL-DIODE. Datasheet pdf. Equivalent





Part

SKCD47C170I

Description

CAL-DIODE

Manufacture

Semikron International

Datasheet
Download SKCD47C170I Datasheet


Semikron International SKCD47C170I

SKCD47C170I; SKCD 47 C 170 I Absolute Maximum Ratings Symbol VRRM IF(AV) IFSM Tjmax Conditi ons Tj = 25 °C, IR = 0.2 mA Ts = 80 ° C, Tj = 150 °C 10 ms sin 180° Tj = 25 °C Tj = 150 °C Values 1700 40 720 5 50 150 Unit V A A A °C CAL-DIODE IF = 55 A VRRM = 1700 V Size: 6,8 mm x 6,8 mm SKCD 47 C 170 I Electrical Charact eristics Symbol i2t IR VF V(TO) rT Con ditions Tj = 150 °C, 10 m.


Semikron International SKCD47C170I

s, sin 180° Tj = 25 °C, VRRM = 1700 V Tj = 125 °C, VRRM = 1700 V Tj = 25 °C , IF = 55 A Tj = 125 °C, IF = 55 A Tj = 125 °C Tj = 125 °C min. typ. max . 1500 0.20 8.00 Unit A2s mA mA V V V mΩ 2.05 1.80 1.11 1.2 2.50 2.30 Fe atures • low forward voltage drop com bined with a low temperature dependence • easy paralleling due to a small fo rward voltage spread • very sof.


Semikron International SKCD47C170I

t recovery behavior • small switching losses • high ruggedness • compatib le to thick wire bonding • compatible to all standard solder processes Dyna mic Characteristics Symbol trr trr Qrr Qrr Irrm Irrm Conditions Tj = 25 °C, 50 A, 1200 V, 800 A/µs Tj = 125 °C, 5 0 A, 1200 V, 800 A/µs Tj = 25 °C, 50 A, 1200 V, 800 A/µs Tj = 125 °C, 50 A , 1200 V, 800 A/µs Tj = 25 °C, 50.



Part

SKCD47C170I

Description

CAL-DIODE

Manufacture

Semikron International

Datasheet
Download SKCD47C170I Datasheet




 SKCD47C170I
SKCD 47 C 170 I
CAL-DIODE
IF = 55 A
VRRM = 1700 V
Size: 6,8 mm x 6,8 mm
SKCD 47 C 170 I
Features
• low forward voltage drop combined
with a low temperature dependence
• easy paralleling due to a small forward
voltage spread
• very soft recovery behavior
• small switching losses
• high ruggedness
• compatible to thick wire bonding
• compatible to all standard solder
processes
Typical Applications*
• freewheeling diode for IGBT
• particularly suitable for frequencies > 8
kHz
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
VRRM
IF(AV)
IFSM
Tjmax
Tj = 25 °C, IR = 0.2 mA
Ts = 80 °C, Tj = 150 °C
10 ms
Tj = 25 °C
sin 180°
Tj = 150 °C
Electrical Characteristics
Symbol Conditions
1700
40
720
550
150
V
A
A
A
°C
min. typ. max. Unit
i2t
IR
VF
V(TO)
rT
Tj = 150 °C, 10 ms, sin 180°
Tj = 25 °C, VRRM = 1700 V
Tj = 125 °C, VRRM = 1700 V
Tj = 25 °C, IF = 55 A
Tj = 125 °C, IF = 55 A
Tj = 125 °C
Tj = 125 °C
1500 A2s
0.20 mA
8.00 mA
2.05 2.50 V
1.80 2.30 V
1.11 V
1.2 m
Dynamic Characteristics
Symbol Conditions
min. typ. max. Unit
trr Tj = 25 °C, 50 A, 1200 V, 800 A/µs
trr Tj = 125 °C, 50 A, 1200 V, 800 A/µs
Qrr Tj = 25 °C, 50 A, 1200 V, 800 A/µs
Qrr Tj = 125 °C, 50 A, 1200 V, 800 A/µs
Irrm Tj = 25 °C, 50 A, 1200 V, 800 A/µs
Irrm Tj = 125 °C, 50 A, 1200 V, 800 A/µs
µs
ns
6 µC
15 µC
A
45 A
Thermal Characteristics
Symbol Conditions
min. typ. max. Unit
Tj -40 150 °C
Tstg -40 150 °C
Tsolder
10 min.
250 °C
Tsolder
5 min.
320 °C
Rth(j-s)
sold. on 0,38 mm DCB, reference point
on copper heatsink close to the chip
0.7
K/W
Mechanical Characteristics
Symbol Conditions
Raster
size
Area total
Anode
Cathode
Wire bond
Package
Chips /
Package
Values
6.8 x 6.8
47
bondable (Al)
solderable (Ag/Ni)
Al, diameter 500 µm
wafer frame
208 (5" Wafer)
Unit
mm2
mm2
pcs
SKCD
ww©w.bDyataSSEheMetI4KUR.nOet N
Rev. 1 – 18.02.2010
1





 SKCD47C170I
SKCD 47 C 170 I
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
2
Rev. 1 – 18.02.2010
© by SEMIKRON








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