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CAL-DIODE. SKCD53C120I4F Datasheet

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CAL-DIODE. SKCD53C120I4F Datasheet






SKCD53C120I4F CAL-DIODE. Datasheet pdf. Equivalent




SKCD53C120I4F CAL-DIODE. Datasheet pdf. Equivalent





Part

SKCD53C120I4F

Description

CAL-DIODE



Feature


SKCD 53 C 120 I4F Absolute Maximum Ratin gs Symbol VRRM IF(AV) IFSM Tjmax Condi tions Tj = 25 °C, IR = 0.12 mA Tc = 80 °C, Tj = 175 °C, Fi=PI/2 10 ms sin 1 80° Tj = 25 °C Tj = 150 °C Values 1 200 61 550 550 175 Unit V A A A °C C AL-DIODE IF = 100 A VRRM = 1200 V Size: 7,3 mm x 7,3 mm Electrical Characteri stics Symbol i²t IR VF Conditions Tj = 150 °C, sin 180°, 10 ms .
Manufacture

Semikron International

Datasheet
Download SKCD53C120I4F Datasheet


Semikron International SKCD53C120I4F

SKCD53C120I4F; Tj = 25 °C, VRRM = 1200 V Tj = 150 °C, VRRM = 1200 V Tj = 25 °C, IF = 100 A Tj = 150 °C, IF = 100 A Tj = 175 °C, IF = 100 A min. typ. max. 1513 0.12 Unit A²s mA mA V V V V m V m 8 .80 2.20 2.15 2.00 0.90 12.5 0.82 11.80 17.70 2.52 2.47 2.31 1.10 13.70 0.98 13.40 SKCD 53 C 120 I4F Features • • • max. junction 175 °C very l ow forward voltage drop positive temp.


Semikron International SKCD53C120I4F

erature coefficient extreme soft recover y V(TO) rT V(TO) rT Tj = 150 °C Tj = 150 °C Tj = 175 °C Tj = 175 °C Dyn amic Characteristics Symbol trr Err Irr m Conditions Tj = 150 °C, 100 A, 600 V, 2000 A/µs Tj = 150 °C, 100 A, 600 V, 2000 A/µs Tj = 150 °C, 100 A, 600 V, 2000 A/µs min. typ. 0.5 5.4 97 m ax. Unit µs mJ A Typical Application s* • freewheeling diode for I.


Semikron International SKCD53C120I4F

GBT Thermal Characteristics Symbol Tj T stg Tsolder Tsolder Rth(j-c) 10 min. 5 min. Semitrans Assembly 0.52 Condition s min. -40 -40 typ. max. 175 175 250 320 Unit °C °C °C °C K/W Mechani cal Characteristics Symbol Raster size Area total Anode Cathode Wire bond Pack age Chips / Package Metallization Metal lization Conditions Values 7,3 x 7,3 53 bondable (Al) solde.

Part

SKCD53C120I4F

Description

CAL-DIODE



Feature


SKCD 53 C 120 I4F Absolute Maximum Ratin gs Symbol VRRM IF(AV) IFSM Tjmax Condi tions Tj = 25 °C, IR = 0.12 mA Tc = 80 °C, Tj = 175 °C, Fi=PI/2 10 ms sin 1 80° Tj = 25 °C Tj = 150 °C Values 1 200 61 550 550 175 Unit V A A A °C C AL-DIODE IF = 100 A VRRM = 1200 V Size: 7,3 mm x 7,3 mm Electrical Characteri stics Symbol i²t IR VF Conditions Tj = 150 °C, sin 180°, 10 ms .
Manufacture

Semikron International

Datasheet
Download SKCD53C120I4F Datasheet




 SKCD53C120I4F
SKCD 53 C 120 I4F
CAL-DIODE
IF = 100 A
VRRM = 1200 V
Size: 7,3 mm x 7,3 mm
SKCD 53 C 120 I4F
Features
• max. junction 175 °C
• very low forward voltage drop
• positive temperature coefficient
• extreme soft recovery
Typical Applications*
• freewheeling diode for IGBT
Absolute Maximum Ratings
Symbol Conditions
VRRM
IF(AV)
IFSM
Tjmax
Tj = 25 °C, IR = 0.12 mA
Tc = 80 °C, Tj = 175 °C, Fi=PI/2
10 ms
Tj = 25 °C
sin 180°
Tj = 150 °C
Electrical Characteristics
Symbol Conditions
i²t
IR
VF
V(TO)
rT
V(TO)
rT
Tj = 150 °C, sin 180°, 10 ms
Tj = 25 °C, VRRM = 1200 V
Tj = 150 °C, VRRM = 1200 V
Tj = 25 °C, IF = 100 A
Tj = 150 °C, IF = 100 A
Tj = 175 °C, IF = 100 A
Tj = 150 °C
Tj = 150 °C
Tj = 175 °C
Tj = 175 °C
Dynamic Characteristics
Symbol Conditions
trr Tj = 150 °C, 100 A, 600 V, 2000 A/µs
Err Tj = 150 °C, 100 A, 600 V, 2000 A/µs
Irrm Tj = 150 °C, 100 A, 600 V, 2000 A/µs
Thermal Characteristics
Symbol Conditions
Tj
Tstg
Tsolder
Tsolder
Rth(j-c)
10 min.
5 min.
Semitrans Assembly
Mechanical Characteristics
Symbol Conditions
Raster
size
Area total
Anode Metallization
Cathode Metallization
Wire bond
Package
Chips /
Package
Values
1200
61
550
550
175
Unit
V
A
A
A
°C
min.
typ.
8.80
2.20
2.15
2.00
0.90
12.5
0.82
11.80
max. Unit
1513
0.12
17.70
2.52
2.47
2.31
1.10
13.70
0.98
13.40
A²s
mA
mA
V
V
V
V
m
V
m
min. typ. max. Unit
0.5 µs
5.4 mJ
97 A
min. typ. max. Unit
-40 175 °C
-40 175 °C
250 °C
320 °C
0.52 K/W
Values
Unit
7,3 x 7,3
53
bondable (Al)
solderable (Ag/Ni)
Al, typ. diameter = 300 µm
wafer frame
270
mm2
mm²
pcs
SKCD
ww©w.DbaytaSShEeMet4IKU.RneOt N
Rev. 0 – 16.03.2011
1




 SKCD53C120I4F
SKCD 53 C 120 I4F
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
2
Rev. 0 – 16.03.2011
© by SEMIKRON










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