2SB1025

2SB1025 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD1418 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1025 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings –120 –80 –5 –1 –2 1 150 –55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Note: Mark hFE1 VCE(sat) VBE fT Cob 1 Min –120 –80 –5 — 60 30 — — — — Typ — — — — — — — — 140 20 Max — — — –10 320 — –1 –0.9 — — Unit V V V µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –100 V, IE = 0 VCE = –5 V, IC = –150 mA VCE = –5 V, I C = –500 mA (Pulse test) V V MHz pF I C = –500 mA, I B = –50 mA (Pulse test) VCE = –5 V, IC = –150 mA VCE = –5 V, IC = –150 mA VCB = –10 V, IE = 0, f = 1 MHz 1. The 2SB1025 is grouped by hFE...