Schottky Barrier Diode
RB080L-30
Applications General rectification
Dimensions (Unit : mm)
Features 1)Small power ...
Schottky Barrier Diode
RB080L-30
Applications General rectification
Dimensions (Unit : mm)
Features 1)Small power mold type. (PMDS) 2)High reliability 3)Low VF
Structure Silicon epitaxial planer
2.6±0.2
21 ①②
1.5±0.2
0.1±0.02 0.1
2.0±0.2
ROHM : PMDS JEDEC : SOD-106
① ② year week factory
Taping dimensions (Unit : mm)
2.0 0.05 4.0 0.1
4.5±0.2 1.2±0.3
5.0±0.3
2.0 4.2
Land size figure (Unit : mm) 2.0
PMDS Structure
1.55 0.05
0.3
5.3 -+00..01 9.5 0.1
5.5 0.05 1.75 0.1
12 0.2
2.9 0.1
4.0 0.1
1.55
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1)
VRM VR Io
30 30 5
V V A
Forward current surge peak (60Hz・1cyc)
Junction temperature
IFSM Tj
70 150
A C
Storage temperature
Tstg 40 to 150
C
(*1)Alumina substrate at the time of assemble 180° Half Sine Wave, Tc=100°C MAX.
Electrical characteristic...