2N5344

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N5344 DESCRIPTION ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= -250V(Min) ·High Switching Speed ·High Current-Gain Bandwidth Product: fT= 60MHz(Min)@ IC= -0.1A APPLICATIONS ·Designed for high voltage switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PD TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Total Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE -250 -250 -5 -1.0 -0.5 40 200 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 4.38 UNIT ℃/W isc Website：www.iscsemi.cn www.DataSheet4U.net INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEX IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= -10mA ; IB= 0 IC= -1A; IB= -0.2A IC= -1A; IB= -0.2A VCB= -250V; IE= 0 VCE= -225V; VBE(off)= -1.5V VCE= -225V; VBE(off)= -1.5V,TC= 150℃ VEB= 5V; IC= 0 IC= -0.5A ; VCE= -...