2SB1048

2SB1048 Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline UPAK 1 3 2 2,4 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 1 3 2SB1048 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings –60 –60 –7 –1 –2 1 150 –55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 × 30 × 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Notes: 1. Pulse test 2. Marking is “BT” Symbol V(BR)CBO V(BR)CEO I CBO I EBO hFE VCE(sat) VBE(sat) Min –60 –60 — — 2000 — — Typ — — — — — — — Max — — –10 –10 100000 –2.0 –2.0 V V Unit V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ VCB = –60 V, IE = 0 VEB = –7 V, IE = 0 VCE = –3 V, IC = –500 mA*1 I C = –500 mA, IB = –1 mA*1 I C = –500 mA, IB = –1 mA*1 2 2SB1048 Area of Safe Operation Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation Pc (W) (on the alumina ceramic board) Collector Current IC (A) –10 –3 iC (peak) PW 1m 1µ s 0.8 –1.0 –0.3 –0.1 –0.03 –0.01 –3 = ...