CY62148ESL

CY62148ESL MoBL® 4-Mbit (512 K × 8) Static RAM 4-Mbit (512 K × 8) Static RAM Features ■ ■ ■ Functional Description The CY62148ESL is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption. Placing the device in standby mode reduces power consumption by more than 99 percent when deselected (CE HIGH). The eight input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW and WE LOW). To write to the device, take Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18). To read from the device, take Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins. Higher speed up to 55 ns Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V Ultra low standby power ❐ Typical standby current: 1 µA ❐ Maximum standby current: 7 µA Ultra low active power ❐ Typical active current: 2 mA at f = 1 MHz Easy me...