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CY62177DV20 Dataheets PDF



Part Number CY62177DV20
Manufacturers Cypress Semiconductor
Logo Cypress Semiconductor
Description 32-Mbit (2M x 16) Static RAM
Datasheet CY62177DV20 DatasheetCY62177DV20 Datasheet (PDF)

CY62177DV20 MoBL2™ 32-Mbit (2M x 16) Static RAM Features ■ ■ ■ Very high speed: 70 ns Wide voltage range: 1.7V – 2.2V Ultra low active power ❐ Typical active current: 2 mA at f = 1 MHz ❐ Typical active current: 12 mA at f = fMAX Ultra low standby power Easy memory expansion with CE1, CE2, and OE features Automatic power down when deselected CMOS for optimum speed and power Offered in 48-ball VFBGA package by 99% when addresses are not toggling. The device can also be put into standby mode whe.

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CY62177DV20 MoBL2™ 32-Mbit (2M x 16) Static RAM Features ■ ■ ■ Very high speed: 70 ns Wide voltage range: 1.7V – 2.2V Ultra low active power ❐ Typical active current: 2 mA at f = 1 MHz ❐ Typical active current: 12 mA at f = fMAX Ultra low standby power Easy memory expansion with CE1, CE2, and OE features Automatic power down when deselected CMOS for optimum speed and power Offered in 48-ball VFBGA package by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: the device is deselected (CE1HIGH or CE2 LOW); outputs are disabled (OE HIGH); both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH); when a write operation is in progress (CE1 LOW, CE2 HIGH and WE LOW). To write to the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from IO pins (IO0 through IO7) is written into the location specified on the address pins (A0 through A20). If Byte High Enable (BHE) is LOW, then data from IO pins (IO8 through IO15) is written into the location specified on the address pins (A0 through A20). To read from the device, take Chip Enables (CE1 LOW and CE2 HIGH) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appears on IO0 to IO7. If Byte High Enable (BHE) is LOW, then data from memory appears on IO8 to IO15. See the Truth Table on page 9 for a complete description of read and write modes. For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines. ■ ■ ■ ■ ■ Functional Description The CY62177DV20 is a high performance CMOS static RAM organized as 2M words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption Logic Block Diagram DATA IN DRIVERS A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 ROW DECODER 2M × 16 RAM ARRAY SENSE AMPS IO0–IO7 IO8–IO15 COLUMN DECODER BHE CE2 Power Down Circuit CE1 BHE BLE A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 WE OE BLE CE2 CE1 www.DataSheet4U.net Cypress Semiconductor Corporation Document #: 001-44018 Rev. ** • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised January 08, 2008 [+] Feedback CY62177DV20 MoBL2™ Pin Configuration Figure 1. 48-Ball VFBGA (8 x 9.5 x 1.2 mm) Top View [1] 1 BLE IO 8 IO 9 VSS VCC IO 14 IO 15 A18 2 OE BHE IO 10 IO11 3 A0 A3 A5 A17 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 IO 1 IO3 IO 4 IO 5 WE A11 6 CE2 IO 0 IO 2 Vcc Vss IO 6 IO 7 A20 A B C D E F G H IO 12 DNU IO 13 A19 A8 A14 A12 A9 Product Portfolio Power Dissipation Product VCC Range (V) Typ[2] 1.8 Speed (ns) Max 2.2 70 Typ[2] 2 Operating ICC (mA) f = 1 MHz Min CY62177DV20LL 1.7 Max 4 f = fmax Typ[2] 12 Max 25 Standby ISB2 (μA) Typ[2] 5 Max 50 Notes 1. DNU pins must be connected to VSS or left open. 2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25°C. Document #: 001-44018 Rev. ** Page 2 of 11 [+] Feedback CY62177DV20 MoBL2™ DC Input Voltage[3, 4] ....................... –0.2V toVCC(max) + 0.2V Output Current into Outputs (LOW) ............................ 20 mA Static Discharge Voltage........................................... >2001V (MIL-STD-883, Method 3015) Latch up Current...................................................... >200 mA Maximum Ratings Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage Temperature ................................ –65°C to + 150°C Ambient Temperature with Power Applied ........................................... –55°C to + 125°C Supply Voltage to Ground Potential ......................................... –0.2V to VCC(max) + 0.2V DC Voltage Applied to Outputs in High Z State[3, 4].......................... –0.2V to VCC(max) + 0.2V Operating Range Device CY62177DV20LL Range Ambient Temperature VCC[5] 1.7V to 2.2V Industrial –40°C to +85°C Electrical Characteristics Over the Operating Range Parameter VOH VOL VIH VIL IIX IOZ ICC Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Current Output Leakage Current VCC Operating Supply Current IOH = –0.1 mA IOL = 0.1 mA VCC = 1.7V to 2.2V VCC = 1.7V to 2.2V GND < VI < VCC GND < VO < VCC, Output Disabled f = fmax = 1/tRC f = 1 MHz VCC = VCC(max) IOUT = 0 mA CMOS levels 1.4 –0.2 –1 –1 12 2 5 Test Conditions 70 ns Min 1.4 0.2 VCC + 0.2V 0.4 +1 +1 25 4 100 Typ[2] Max Unit V V V V μA μA mA mA μA ISB1 Automatic CE Power Down CE1 > VCC – 0.2V or.


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