CY62177DV30

CY62177DV30 MoBL® 32-Mbit (2M x 16) Static RAM Features ■ ■ ■ Very high speed: 55 ns Wide voltage range: 2.20 V–3.60 V Ultra-low active power ❐ Typical active current: 2 mA @ f = 1 MHz ❐ Typical active current: 15 mA @ f = fmax Ultra low standby power Easy memory expansion with CE1, CE2 and OE features Automatic power-down when deselected Complementary metal oxide semiconductor (CMOS) for optimum speed/power Packages offered in a 48-ball fine ball grid array (FBGA) ■ ■ ■ ■ ■ applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE1 LOW, CE2 HIGH and WE LOW). Writing to the device is accomplished by taking Chip Enables (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A20). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A20). Reading from the device is accomplished by taking Chi...