2SB1059

2SB1059 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD1490 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB1059 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings –70 –50 –6 –1 0.75 150 –55 to +150 Unit V V V A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –70 –50 –6 — — 1 Typ — — — — — — — 65 35 Max — — — –1 –0.2 320 –0.6 — — Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –55 V, IE = 0 VEB = –6 V, IC = 0 VCE = –2 V, IC = –0.1 A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: B 100 to 200 C 160 to 320 V(BR)EBO I CBO I EBO hFE* 100 — — — VCE(sat) fT Cob V MHz pF I C = –1 A, IB = –0.1 A VCE = –2 V, IC = –10 mA VCB = –10 V, IE = 0, f = 1 MHz 1. The 2SB1059 is grouped by hFE as follows. See characteristic curves of 2SB740. 2 2SB1059 Maximum Collector Dissipation Curve 1.2 Collector power dissipation PC (W) 0.8 0.4 0 50 100 150 Ambient Temperature Ta (°C) 3 Unit: mm 4.8 ± 0.3 3.8 ± ...