CYU01M16SFCU

PRELIMINARY CYU01M16SFCU MoBL3™ 16-Mbit (1M x 16) Pseudo Static RAM Features Wide voltage range: 1.7V–1.95V Access Time: 70 ns Ultra-low active power — Typical active current: 3 mA @ f = 1 MHz — Typical active current: 18mA @ f = fmax Ultra low standby power 16-word Page Mode Automatic power-down when deselected CMOS for optimum speed/power Offered in a 48-ball BGA Package Operating Temperature: –40°C to +85°C portable applications such as cellular telephones. The device can be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE1 LOW and CE2 HIGH and WE LOW). Writing to the device is accomplished by taking Chip Enable (CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19). Reading from the device is accomplished by taking Chip Enables (CE1 LOW and CE2 HIGH) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then ...