2SB1071

Power Transistors 2SB1071, 2SB1071A Silicon PNP epitaxial planar type For low-voltage switching 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 ■ Features Low collector-emitter saturation voltage VCE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 7.5±0.2 φ 3.1±0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1071 2SB1071A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −40 −50 −20 −40 −5 −4 −8 25 2 150 −55 to +150 °C °C V A A W 1 2 3 Unit V Solder Dip (4.0) 1.4±0.1 1.3±0.2 0.5+0.2 –0.1 14.0±0.5 0.8±0.1 2.54±0.3 Collector-emitter voltage 2SB1071 (Base open) 2SB1071A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation V 5.08±0.5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SB1071 2SB1071A 2SB1071 2SB1071A IEBO hFE1 hFE2 * Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf ICBO VCB = −40 V, IE = 0 VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = − 0.1 A VCE = −2 V, IC = −1 A IC = −2 A, IB = − 0.1 A IC = −2 A, IB = − 0.1 A VCE = −5 V, IC = − 0.5 A, f = 10 MHz IC = −2 A, IB1...