KDS4470

SMD Type 40V N-Channel PowerTrench MOSFET KDS4470 IC IC Features 12.5 A, 40 V. RDS(ON) = 9m @ VGS = 10 V Low gate charge (45 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power dissipation Power dissipation Power dissipation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG R R R JA JA JC Symbol VDSS VGS ID Rating 40 +30/-20 12.5 50 2.5 Unit V V A A PD 1.4 1.2 -55 to 175 50 125 25 W Operating and Storage Temperature Range Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Ambient (Note 1c) Thermal Resistance Junction to Case (Note 1) /W /W /W www.DataSheet4U.net www.kexin.com.cn 1 SMD Type KDS4470 Electrical Characteristics Ta = 25 Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source ...