KDS4501H

SMD Type Transistors IC Complementary PowerTrench Half-Bridge MOSFET KDS4501H Features N-Channel 9.3 A, 30 V RDS(ON) = 18m RDS(ON) = 23m P-Channel -5.6 A, -20 V RDS(ON) = 46 m RDS(ON) = 63 m @ VGS =- 4.5 V @ VGS =-2.5V @ VGS = 10 V @ VGS =4.5V Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Temperature Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Case (Note 1) TJ, TSTG R R JA JC Symbol VDSS VGS ID N-Channel 30 20 9.3 20 2.5 P- Channel -20 8 -5.6 -20 Unit V V A A PD 1.2 1 -55 to 150 50 25 W /W /W www.DataSheet4U.net www.kexin.com.cn 1 SMD Type KDS4501H Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IDSS Symbol BVDSS Testconditons VGS = 0 V, ID = 250 VGS = 0 V, ID = -250 ID = 250 ID = -250 A A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Transistors IC Min 30 -20 Typ Max Unit V A, Referenced to 25 A, Referenced to 25 24 -13 1 -1 100 100 1 -0.4 1.6 -0.7 -4 3 14 21 17 36 18 29 23 46 80 63 3 -1.5 mV/ VDS = 24V, VGS = 0 V VDS = -16 V, VGS = 0 V VGS = VGS = 20V, VDS = 0 V 8 V, VDS = 0 V A A A nA Gate-Body Leakage IGSS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VGS(th) VDS = VGS, ID = 2...