SILICON EPITAXIAL PLANAR DIODE
SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES High Capacitance Ratio : C2V/C25V=6.3(Min.) Low Series Resistance : rS=...
Description
SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES High Capacitance Ratio : C2V/C25V=6.3(Min.) Low Series Resistance : rS=0.57 (Max.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature
VR Tj
Storage Temperature Range
Tstg
RATING 32 125
-55 125
UNIT V
CE DF
KDV214VA
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
21
B DIM MILLIMETERS
A A 1.4Ź0.05 B 1.0Ź0.05 C 0.6Ź0.05 D 0.28Ź0.03 E 0.5Ź0.05 F 0.12Ź0.03
VSC
Marking
Type Name
V2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
IR
Capacitance
C2V
Capacitance
C25V
Capacitance Ratio
C2V/C25V
Series Resistance
rS
Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) 0.02 C(Min.)
(VR=2~25V)
TEST CONDITION VR=28V VR=2V, f=1MHz VR=25V, f=1MHz
VR=5V, f=470MHz
MIN. -
14.15 2.06 6.3
-
TYP. -
MAX. 10
15.75 2.35
0.57
UNIT nA pF pF -
2005. 4. 7
Revision No : 0
1/2
REVERSE CURRENT IR (A)
KDV214VA
10 -10
IR - VR
10 -11
10 -12
10 -13 0
10 20 30 REVERSE VOLTAGE VR (V)
40
TOTAL CAPACITANCE CT (pF)
C T - VR
20 f=1MHz
15
10
5
0 1 10 50 REVERSE VOLTAGE VR (V)
0.6 0.5 0.4 0.3 0.2 0.1
0 1
r s - VR
f=470MHz
10 REVERSE VOLTAGE VR (V)
50
∆(LOG CT) / ∆(LOG VR)
∆(LOG CT) / ∆(LOG VR) - VR
0
-0.5
-1.0
-1.5 1
10 REVERSE VOLTAGE VR (V)
50
SERIES RESISTANCE rs (Ω)
2005. 4. 7
Revision No : 0
2/2
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