Document
SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES High Capacitance Ratio : C2V/C25V=6.5(Typ.) Low Series Resistance : rS=0.4 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Peak Reverse Voltage
VRM
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING 30
35(RL=10k ) 125
-55 125
UNIT V V
KDV215E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK B A
GG
C 1
2 D
1. ANODE 2. CATHODE
E
F
DIM A B C D E F G
MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.10
ESC
Marking
Type Name
TA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
IR
Reverse Current
IR
Capacitance
C2V
Capacitance
C25V
Capacitance Ratio
C2V/C25V
Series Resistance
rS
Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) 0.02 C(Min.)
(VR=2~25V)
TEST CONDITION VR=30V VR=30V, (Ta=60 ) VR=2V, f=1MHz VR=25V, f=1MHz
VR=5V, f=470MHz
MIN. -
14.16 2.11 5.90
-
TYP. -
6.50 0.4
MAX. 10 100
16.25 2.43 7.15 0.55
UNIT nA nA pF pF -
2014. 3. 31
Revision No : 4
1/2
CAPACITANCE CT (pF)
KDV215E
C T - VR
100 f=1MHz
50 Ta=25 C 30
10 5 3
1 0 4 8 12 16 20 24 28
REVERSE VOLTAGE VR (V)
SERIES RESISTANCE rs (Ω)
0.8 0.6 0.4
0.2
0 1
r s - VR
f=470MHz Ta=25 C
35
10
REVERSE VOLTAGE VR (V)
30
3 f=1MHz
2
1
0
C - Ta
VR=2V 14 20 25
-1
-2
-40 -20
0
20 40 60 80
AMBIENT TEMPERATURE Ta ( C)
C(Ta) - C(25)
NOTE : C(%) =
100
C(25)
CAPACITANCE CHANGE RATIO C (%)
2014. 3. 31
Revision No : 4
2/2
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