2SK3474-01

2SK3474-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Applications for Switching Foot Print Pattern Absolute Maximum Ratings at Tc=25°C ( unless otherwise specified) Unit V V A Continuous drain current A A Pulsed drain current ID(puls] V Gate-source voltage VGS A Repetitive or non-repetitive IAR *2 mJ Maximum Avalanche Energy EAS *1 kV/µs Maximum Drain-Source dV/dt dV DS /dt kV/µs Peak Diode Recovery dV/dt dV/dt *3 Max. power dissipation PD W W Operating and storage Tch °C temperature range Tstg °C < *1 L=0.228mH, Vcc=48V, See to Avalanche Energy Graph *2 Tch =150°C *3 *4 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area:500mm2) Item Drain-source voltage Symbol V DS VDSX ID Ratings 150 120 ±33 ±4.1 *4 ±132 ±30 33 169 20 5 2.4 *4 150 +150 -55 to +150 Remarks VGS=30V Ta=25°C Equivalent circuit schematic (4) Drain(D) (1) Gate(G) VDS < =150V Ta=25°C (2) Source(S) [signal line] (3) Source(S) [power line] IF < = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < Electrical characteristics atTc =25°C ( unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total G...