Preliminary Datasheet
RJP60D0DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding R07DS0173EJ0100 Rev.1.00 Mar 11, 2011
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