2SB1079

2SB1079 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1559 Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 kΩ (Typ) 400 Ω (Typ) 3 1 2 3 2SB1079 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) IB PC * Tj Tstg 1 Ratings –100 –100 –7 –20 –30 –3 100 150 –55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –100 –100 –100 –7 — — 1000 — — — — — — Typ — — — — — — — — — — — 0.6 3.5 Max — — — — –100 –1.0 20000 –2.0 –2.5 –3.0 –3.5 — — V V V V µs µs I C = –10 A, IB1 = –IB2 = –20 mA I C = –20 A, IB = –200 mA*1 Unit V V V V µA mA Test conditions I C = –0.1 mA, IE = 0 I C = –25 mA, RBE = ∞ I C = –200 mA, RBE = ∞*1 I E = –50 mA, IC = 0 VCB = –100 V, IE = 0 VCE = –80 V, RBE = ∞ VCE = –3 V, IC = –10 A*1 I C = –10 A, IB = –20 mA*1 Collector to emitter breakdown V(BRCEO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(sus) V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Collector to emitter saturation voltage Base to emitter saturation voltage Turn o...