CDBFN120-G

SMD Schottky Barrier Rectifiers SMD Diodes Specialist CDBFN120-G Thru CDBFN1100-G Voltage: 20 to 100 Volts Current: 1.0 Amp RoHS Device Features - Batch process design, excellent powe dissipation offers better reverse leakage current . -Low profile surface mounted application in order to optimize board space. -Low power loss, high efficiency. -High current capability, low forward voltage dorp. -High surge capability. -Guardring for overvoltage protection. -Very iny plastic SMD package. -Ultra high-speed switching. -Silicon epitaxial planarchip, metal silicon junction. -Lead-free parts meet environmental standards of MIL-STD-19500 /228 SOD-323 0.106 (2.70) 0.091 (2.3) 0.012(0.3) Typ. 0.057 (1.45) 0.041 (1.05) 0.047 (1.2) 0.031 (0.8) Mechanical data -Case: JEDEC SOD-323, Molded plastic -Terminals: Solde plated, solderable per MIL-STD-750, method 2026. -Polarity: Indicated by cathode band. -Mounting position: Any -Weight:0.008 gram(approx.). Maximum Ratings(at TA=25 OC Parameter Repetitive peak reverse voltage Maximum RMS voltage Continuous reverse voltage Maximum forward voltage @IF=1.0A Forward rectified current Forward surge current, 8.3ms half sine wave superimposed on rated load (JEDEC method) Reverse current on VR=VRRM @TA=25 C @TA=125 C Typ. thermal resistance, junction to ambient air Typ. diode junction capacitance (Note 1) Operating junction temperature Storage temperature Note 1: f=1MHz and applied 4V DC reverse voltage. O O 0.016(0.4) Typ. 0.016(0.4) Typ. Dim...