Preliminary Datasheet
RJK03B8DPA
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.2 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G1790-0210 Rev.2.10 May 12, 2010
Outline
RENESAS Package code: PWSN0008DC-A (Packag...
