2SB1119

Ordering number:1785A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1119/2SD1619 LF Amplifier, Electronic Governor Applications Features · Very small size making it easy to provide highdensity, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1119/2SD1619] ( ) : 2SB1119 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Conditions Mounted on ceramic board (250mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO hFE1 hFE2 fT VCB=(–)20V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)50mA VCE=(–)2V, IC=(–)1A VCE=(–)10V, IC=(–)50mA * ; The 2SB1119/2SD1619 are classified by 50mA hFE as follows : 100 R 200 140 S 280 200 T 400 280 U 560 Marking 2SB1119 : BB 2SD1619 : DB hFE rank : R, S, T, U E : Emitter C : Collector B : Base SANYO : PCP (Bottom view) Ratings (–)25 (–)25 (–)5 (–)1 (–)2 500 1.3 150 –55 to +150 Unit V V V A A mW W ˚C ˚C Ratings min typ 100* 40 180 max (–)0.1 (–)0.1 560* Unit µA µA MHz Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, airc...