2SB1120

Ordering number:1786A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1120 High-Current Driver Applications Applications · Strobes, voltage regulators, relay drivers, lamp drivers. Features · Low collector-to-emitter saturation voltage : VCE(sat)max=–0.45V. · Large current capacity : IC=–2.5A, ICP=–5A. · Very small size making it easy to provide highdensity, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1120] E : Emitter C : Collector B : Base Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Mounted on ceramic board (250mm2×0.8mm) Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO hFE1 hFE2 fT VCB=–16V, IE=0 VEB=–4V, IC=0 VCE=–2V, IC=–500mA VCE=–2V, IC=–3A VCE=–10V, IC=–50mA * ; The 2SB1120 is classified by 500mA hFE as follows : 100 E 200 160 F 320 280 G 560 Marking BC hFE rank : E, F, G SANYO : PCP (Bottom view) Ratings –20 –10 –7 –2.5 –5 500 1.3 150 –55 to +150 Unit V V V A A mW W ˚C ˚C Ratings min typ 100* 70 250 max –100 –100 560* Unit nA nA MHz Any and all SANYO products described or contained herein do not have specifications that can handle applications that require ...