Document
Ordering number:ENN2019A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1124/2SD1624
High Current Switching Applications
Applications
· Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Package Dimensions
unit:mm 2038A
[2SB1124/2SD1624]
4.5 1.6
Features
· Adoption of FBET, MBIT processes. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Large current capacity and wide ASO.
0.4 3 1.5
1.5
0.5 2 3.0 0.75 1
1.0
2.5 4.25max
0.4
( ) : 2SB1124
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Mounted on ceramic board (250mm2×0.8mm)
1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view)
Conditions
Ratings (–)60 (–)50 (–)6 (–)3 (–)6 500 1.5 150 –55 to +150
Unit V V V A A mW W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE1 hFE2 fT VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)3A VCE=(–)10V, IC=(–)50mA 100* 35 150 MHz Conditions Ratings min typ max (–)1 (–)1 560* Unit µA µA
* ; The 2SB1124/2SD1624 are classified by 100mA hFE as follows :
Rank hFE R 100 to 200 S 140 to 280 T 200 to 400 U 280 to 560
Marking 2SB1124 : BG 2SD1624 : DG
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1003TN (KOTO)/92098HA (KT)/3307AT, TS No.2019–1/4
2SB1124/2SD1624
Continued from preceding page.
Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCE(sat) VBE(sat) Conditions VCB=(–)10V, f=1MHz IC=(–)2A, IB=(–)100mA IC=(–)2A, IB=(–)100mA (–)60 (–)50 (–)6 70 (70) 650 (450) 35 (35) Ratings min typ (39) 25 (–0.35) 0.19 (–0.94) (–0.7) 0.5 (–)1.2 max Unit pF pF V V V V V V ns ns ns ns ns ns
V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO IE=(–)10µA, IC=0 ton tstg tf See specified Test Circuit. See specified Test Circuit. See specified Test Circuit.
Switching Time Test Circuit
PW=20µs D.C.≤1% INPUT IB1 RB IB2 OUTPUT 25Ω
VR 50Ω
+ 100µF --5V
+ 470µF 25V
10IB1= --10IB2=IC=1A (For PNP, the polarity is reversed.)
--5.0 --4.5
IC -- VCE
2SB1124
5.0
IC -- VCE
2SD1624
0 --20
mA
4.5
Collector Current, IC – A
--100
--3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 --0.4 --0.8 --1.2
Collector Current, IC – A
--4.0
mA
4.0 3.5 3.0 2.5 2.0 1.5
A 100m 80mA 60mA
--50mA
--20mA
--10mA
--5mA
40mA
20mA
10mA
5mA
1.0 0.5
IB=0
--1.6 --2.0 ITR08907
0 0 0.4 0.8 1.2
IB=0
1.6 2.0 ITR08908
Collector-to-Emitter Voltage, VCE – V
--2.0 --1.8
Collector-to-Emitter Voltage, VCE – V
2.0 1.8
IC -- VCE
--14 mA
--12m A
2SB1124
IC -- VCE
8mA
2SD1624
Collector Current, IC – A
--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --2 --4 --6 --8 --10
--8mA
--6mA
Collector Current, IC – A
--1.6
--10mA
1.6 1.4 1.2 1.0 0.8 0.6 0.4
7mA
6mA 5mA
4mA
3mA 2mA
1mA
--4mA
--2mA
0.2
IB=0
--12 --14 --16 --18 --20
0 0 2 4 6 8 10 12 14 ITR08909
IB=0
16 18 20
Collector-to-Emitter Voltage, VCE – V
Collector-to-Emitter Voltage, VCE – V
ITR08910
No.2019–2/4
2SB1124/2SD1624
--3.2 --2.8
IC -- VBE
2SB1124 VCE= --2V
Collector Current, IC – A
3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0
IC -- VBE
2SD1624 VCE=2V
Collector Current, IC – A
--2.4 --2.0 --1.6
°C 25°C --25°C
Ta=7 5
--1.2 --0.8 --0.4 0 0 --0.2 --0.4 --0.6
--0.8
--1.0
--1.2
0
0.2
0.4
0.6
Ta= 75° 25 ° C C --25° C
0.8 1.0
1.2 ITR08912
Base-to-Emitter Voltage, VBE – V
1000 7 5
ITR08911 1000 7 5
Base-to-Emitter Voltage, VBE – V
hFE -- IC
2SB1124 VCE= --2V
Ta=75°C
hFE -- IC
2SD1624 VCE=2V
25°C
DC Current Gain, hFE
3 2
DC Current Gain, hFE
3 2
25°C
Ta=75°C
--25°C
--25°C
100 7 5 3 2 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5
100 7 5 3 2 7 0.01 2 3 5 7 0.1 2 3 5 7 .